Defect generation by hydrogen at the Si-SiO2 interface

Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides

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136 Citations (Scopus)

Abstract

The interactions between hydrogen and the (001)Si-SiO2 interface were studied. It was found that H+ is the only stable state of hydrogen at an Si-SiO2 interface.

Original languageEnglish
Article number165506
JournalPhysical Review Letters
Volume87
Issue number16
Publication statusPublished - 15 Oct 2001
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rashkeev, S., Fleetwood, D. M., Schrimpf, R. D., & Pantelides, S. T. (2001). Defect generation by hydrogen at the Si-SiO2 interface. Physical Review Letters, 87(16), [165506].