Defect generation by hydrogen at the Si-SiO2 interface

Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides

Research output: Contribution to journalArticle

133 Citations (Scopus)

Abstract

The interactions between hydrogen and the (001)Si-SiO2 interface were studied. It was found that H+ is the only stable state of hydrogen at an Si-SiO2 interface.

Original languageEnglish
Article number165506
JournalPhysical Review Letters
Volume87
Issue number16
Publication statusPublished - 15 Oct 2001
Externally publishedYes

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Hydrogen
defects
hydrogen
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rashkeev, S., Fleetwood, D. M., Schrimpf, R. D., & Pantelides, S. T. (2001). Defect generation by hydrogen at the Si-SiO2 interface. Physical Review Letters, 87(16), [165506].

Defect generation by hydrogen at the Si-SiO2 interface. / Rashkeev, Sergey; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.

In: Physical Review Letters, Vol. 87, No. 16, 165506, 15.10.2001.

Research output: Contribution to journalArticle

Rashkeev, S, Fleetwood, DM, Schrimpf, RD & Pantelides, ST 2001, 'Defect generation by hydrogen at the Si-SiO2 interface', Physical Review Letters, vol. 87, no. 16, 165506.
Rashkeev S, Fleetwood DM, Schrimpf RD, Pantelides ST. Defect generation by hydrogen at the Si-SiO2 interface. Physical Review Letters. 2001 Oct 15;87(16). 165506.
Rashkeev, Sergey ; Fleetwood, D. M. ; Schrimpf, R. D. ; Pantelides, S. T. / Defect generation by hydrogen at the Si-SiO2 interface. In: Physical Review Letters. 2001 ; Vol. 87, No. 16.
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