Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H-SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25±0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5±0.3 eV.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2 May 2000|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces