Defect annealing kinetics in irradiated 6H-SiC

W. J. Weber, W. Jiang, S. Thevuthasan

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H-SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25±0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5±0.3 eV.

Original languageEnglish
Pages (from-to)410-414
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume166
DOIs
Publication statusPublished - 2 May 2000
Externally publishedYes

Fingerprint

sublattices
recovery
Annealing
Recovery
Defects
Kinetics
annealing
defects
kinetics
Activation energy
disorders
activation energy
Isothermal annealing
Helium
Rutherford backscattering spectroscopy
room temperature
Ion bombardment
ion irradiation
Temperature
Spectrometry

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Defect annealing kinetics in irradiated 6H-SiC. / Weber, W. J.; Jiang, W.; Thevuthasan, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 166, 02.05.2000, p. 410-414.

Research output: Contribution to journalArticle

@article{b6095074c745484eac3484cec532d8ce,
title = "Defect annealing kinetics in irradiated 6H-SiC",
abstract = "Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H-SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25±0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5±0.3 eV.",
author = "Weber, {W. J.} and W. Jiang and S. Thevuthasan",
year = "2000",
month = "5",
day = "2",
doi = "10.1016/S0168-583X(99)00868-X",
language = "English",
volume = "166",
pages = "410--414",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Defect annealing kinetics in irradiated 6H-SiC

AU - Weber, W. J.

AU - Jiang, W.

AU - Thevuthasan, S.

PY - 2000/5/2

Y1 - 2000/5/2

N2 - Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H-SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25±0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5±0.3 eV.

AB - Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H-SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25±0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5±0.3 eV.

UR - http://www.scopus.com/inward/record.url?scp=0033738037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033738037&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00868-X

DO - 10.1016/S0168-583X(99)00868-X

M3 - Article

VL - 166

SP - 410

EP - 414

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -