Damage formation and recovery in C+-irradiated 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, D. E. McCready

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Single crystals of 6H-SiC were irradiated with 550 keV C+ ions over a range of temperatures (180-870 K) and ion fluences (1 × 1018 to 5 × 1019 C+/m2). The damage induced by the irradiation ranged from dilute defect concentrations up to buried amorphous layers. Damage recovery in the samples irradiated at 180 K has been followed by isochronal annealing (20 min) at 300, 470, 670 and 870 K. The accumulation and recovery of atomic disorder on the Si sublattice has been studied using in situ Rutherford Backscattering Spectrometry in combination with ion channeling methods (RBS/C). The disordering rate shows a sigmoidal dependence on dose at each irradiation temperature. Simultaneous defect recovery processes occur during irradiation at room temperature, and post-irradiation thermal defect recovery is also observed at room temperature. Published by Elsevier Science B.V.

Original languageEnglish
Pages (from-to)562-566
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume148
Issue number1-4
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

recovery
Irradiation
damage
Recovery
irradiation
Ions
Defects
defects
Temperature
ions
Rutherford backscattering spectroscopy
room temperature
Spectrometry
sublattices
Dosimetry
backscattering
fluence
Single crystals
disorders
Annealing

Keywords

  • 6H-SiC
  • Defect annealing
  • Ion irradiation
  • RBS/Channeling

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Damage formation and recovery in C+-irradiated 6H-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, 1999, p. 562-566.

Research output: Contribution to journalArticle

Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; McCready, D. E. / Damage formation and recovery in C+-irradiated 6H-SiC. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1999 ; Vol. 148, No. 1-4. pp. 562-566.
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