Damage accumulation and annealing in 6H-SiC irradiated with Si+

W. Jiang, W. J. Weber, S. Thevuthasan, D. E. McCready

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He+ RBS in a 〈0 0 0 1〉-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si+ ion implantation (30° off normal) at a temperature of -110°C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110°C to 900°C. At ion fluences below 7.5 × 1013 Si+/cm2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 × 1014 Si+/cm2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 × 1015 Si+/cm2 (-90°C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90°C to 600°C.

Original languageEnglish
Pages (from-to)333-341
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume143
Issue number3
Publication statusPublished - 1 Sep 1998
Externally publishedYes

Fingerprint

Annealing
damage
annealing
fluence
Recovery
recovery
Temperature
sublattices
Ions
Defects
Amorphization
Point defects
Silicon carbide
Ion implantation
defects
room temperature
silicon carbides
point defects
temperature
ion implantation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Damage accumulation and annealing in 6H-SiC irradiated with Si+. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 143, No. 3, 01.09.1998, p. 333-341.

Research output: Contribution to journalArticle

@article{a08d0f64ec7d4796be1c7709864832f1,
title = "Damage accumulation and annealing in 6H-SiC irradiated with Si+",
abstract = "Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He+ RBS in a 〈0 0 0 1〉-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si+ ion implantation (30° off normal) at a temperature of -110°C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110°C to 900°C. At ion fluences below 7.5 × 1013 Si+/cm2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 × 1014 Si+/cm2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 × 1015 Si+/cm2 (-90°C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10{\%}) with increasing temperature over the range from -90°C to 600°C.",
author = "W. Jiang and Weber, {W. J.} and S. Thevuthasan and McCready, {D. E.}",
year = "1998",
month = "9",
day = "1",
language = "English",
volume = "143",
pages = "333--341",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Damage accumulation and annealing in 6H-SiC irradiated with Si+

AU - Jiang, W.

AU - Weber, W. J.

AU - Thevuthasan, S.

AU - McCready, D. E.

PY - 1998/9/1

Y1 - 1998/9/1

N2 - Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He+ RBS in a 〈0 0 0 1〉-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si+ ion implantation (30° off normal) at a temperature of -110°C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110°C to 900°C. At ion fluences below 7.5 × 1013 Si+/cm2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 × 1014 Si+/cm2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 × 1015 Si+/cm2 (-90°C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90°C to 600°C.

AB - Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He+ RBS in a 〈0 0 0 1〉-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si+ ion implantation (30° off normal) at a temperature of -110°C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110°C to 900°C. At ion fluences below 7.5 × 1013 Si+/cm2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 × 1014 Si+/cm2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 × 1015 Si+/cm2 (-90°C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90°C to 600°C.

UR - http://www.scopus.com/inward/record.url?scp=0032167216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032167216&partnerID=8YFLogxK

M3 - Article

VL - 143

SP - 333

EP - 341

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 3

ER -