Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He+ RBS in a 〈0 0 0 1〉-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si+ ion implantation (30° off normal) at a temperature of -110°C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110°C to 900°C. At ion fluences below 7.5 × 1013 Si+/cm2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 × 1014 Si+/cm2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 × 1015 Si+/cm2 (-90°C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90°C to 600°C.
|Number of pages||9|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1 Sep 1998|
ASJC Scopus subject areas
- Nuclear and High Energy Physics