CVD of metal chalcogenide films

I. S. Chuprakov, K. H. Dahmen

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The preparation of SnE, Ag 2E and Cu 2E (E = Se, Te) thin films by Chemical Vapor Deposition (CVD) and Vapor Phase Transport (VPT) has been studied. The precursors, [Sn{(SiMe 3) 2CH) 2(μ-E)] 2 (E = Te, Se), have been studied for the deposition of SnE films. Deposition experiments have been performed on nonmetallic substrates. Si, and SiO 2, as well as on Cu and on M/Si and M/SiO2 substrates (M = Cu, Ag and Au). Depositions were carried out at temperatures ranging between 300 -600° C and pressures ranging between 0.5 - 40 mbar in either pure H 2 atmosphere or H 2/He mixture in a cold wall vertical CVD reactor. The film deposition was very selective with respect to the metal substrates, where phases of M2E and MSn were found. Thin metal film was employed as a seeding layer to obtain SnTe films. Thin films of chalcogenides M2E (M = Ag, Cu and E = Se, Te) were prepared by vapor transport and electron beam evaporation techniques. The magnetoresistivity (MR) of Ag 2-δTe showed markedly different temperature dependencies for oriented and non-oriented films. Furthermore, in contrast to the bulk samples, a large anisotropy and a sign reversal effect of MR, were found in these films.

Original languageEnglish
Title of host publicationJournal De Physique. IV : JP
Volume9 I
Edition8
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

metal films
vapor deposition
magnetoresistivity
cold walls
chalcogenides
inoculation
thin films
reactors
evaporation
electron beams
vapors
vapor phases
atmospheres
preparation
anisotropy
temperature
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chuprakov, I. S., & Dahmen, K. H. (1999). CVD of metal chalcogenide films. In Journal De Physique. IV : JP (8 ed., Vol. 9 I)

CVD of metal chalcogenide films. / Chuprakov, I. S.; Dahmen, K. H.

Journal De Physique. IV : JP. Vol. 9 I 8. ed. 1999.

Research output: Chapter in Book/Report/Conference proceedingChapter

Chuprakov, IS & Dahmen, KH 1999, CVD of metal chalcogenide films. in Journal De Physique. IV : JP. 8 edn, vol. 9 I.
Chuprakov IS, Dahmen KH. CVD of metal chalcogenide films. In Journal De Physique. IV : JP. 8 ed. Vol. 9 I. 1999
Chuprakov, I. S. ; Dahmen, K. H. / CVD of metal chalcogenide films. Journal De Physique. IV : JP. Vol. 9 I 8. ed. 1999.
@inbook{8c08e56f43c44e2d8134be6bf183f2e3,
title = "CVD of metal chalcogenide films",
abstract = "The preparation of SnE, Ag 2E and Cu 2E (E = Se, Te) thin films by Chemical Vapor Deposition (CVD) and Vapor Phase Transport (VPT) has been studied. The precursors, [Sn{(SiMe 3) 2CH) 2(μ-E)] 2 (E = Te, Se), have been studied for the deposition of SnE films. Deposition experiments have been performed on nonmetallic substrates. Si, and SiO 2, as well as on Cu and on M/Si and M/SiO2 substrates (M = Cu, Ag and Au). Depositions were carried out at temperatures ranging between 300 -600° C and pressures ranging between 0.5 - 40 mbar in either pure H 2 atmosphere or H 2/He mixture in a cold wall vertical CVD reactor. The film deposition was very selective with respect to the metal substrates, where phases of M2E and MSn were found. Thin metal film was employed as a seeding layer to obtain SnTe films. Thin films of chalcogenides M2E (M = Ag, Cu and E = Se, Te) were prepared by vapor transport and electron beam evaporation techniques. The magnetoresistivity (MR) of Ag 2-δTe showed markedly different temperature dependencies for oriented and non-oriented films. Furthermore, in contrast to the bulk samples, a large anisotropy and a sign reversal effect of MR, were found in these films.",
author = "Chuprakov, {I. S.} and Dahmen, {K. H.}",
year = "1999",
language = "English",
volume = "9 I",
booktitle = "Journal De Physique. IV : JP",
edition = "8",

}

TY - CHAP

T1 - CVD of metal chalcogenide films

AU - Chuprakov, I. S.

AU - Dahmen, K. H.

PY - 1999

Y1 - 1999

N2 - The preparation of SnE, Ag 2E and Cu 2E (E = Se, Te) thin films by Chemical Vapor Deposition (CVD) and Vapor Phase Transport (VPT) has been studied. The precursors, [Sn{(SiMe 3) 2CH) 2(μ-E)] 2 (E = Te, Se), have been studied for the deposition of SnE films. Deposition experiments have been performed on nonmetallic substrates. Si, and SiO 2, as well as on Cu and on M/Si and M/SiO2 substrates (M = Cu, Ag and Au). Depositions were carried out at temperatures ranging between 300 -600° C and pressures ranging between 0.5 - 40 mbar in either pure H 2 atmosphere or H 2/He mixture in a cold wall vertical CVD reactor. The film deposition was very selective with respect to the metal substrates, where phases of M2E and MSn were found. Thin metal film was employed as a seeding layer to obtain SnTe films. Thin films of chalcogenides M2E (M = Ag, Cu and E = Se, Te) were prepared by vapor transport and electron beam evaporation techniques. The magnetoresistivity (MR) of Ag 2-δTe showed markedly different temperature dependencies for oriented and non-oriented films. Furthermore, in contrast to the bulk samples, a large anisotropy and a sign reversal effect of MR, were found in these films.

AB - The preparation of SnE, Ag 2E and Cu 2E (E = Se, Te) thin films by Chemical Vapor Deposition (CVD) and Vapor Phase Transport (VPT) has been studied. The precursors, [Sn{(SiMe 3) 2CH) 2(μ-E)] 2 (E = Te, Se), have been studied for the deposition of SnE films. Deposition experiments have been performed on nonmetallic substrates. Si, and SiO 2, as well as on Cu and on M/Si and M/SiO2 substrates (M = Cu, Ag and Au). Depositions were carried out at temperatures ranging between 300 -600° C and pressures ranging between 0.5 - 40 mbar in either pure H 2 atmosphere or H 2/He mixture in a cold wall vertical CVD reactor. The film deposition was very selective with respect to the metal substrates, where phases of M2E and MSn were found. Thin metal film was employed as a seeding layer to obtain SnTe films. Thin films of chalcogenides M2E (M = Ag, Cu and E = Se, Te) were prepared by vapor transport and electron beam evaporation techniques. The magnetoresistivity (MR) of Ag 2-δTe showed markedly different temperature dependencies for oriented and non-oriented films. Furthermore, in contrast to the bulk samples, a large anisotropy and a sign reversal effect of MR, were found in these films.

UR - http://www.scopus.com/inward/record.url?scp=0033188081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033188081&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0033188081

VL - 9 I

BT - Journal De Physique. IV : JP

ER -