Current transport in ZnO/ZnS/Cu(In,Ga)(S,Se)2 solar cell

M. Rusu, W. Eisele, R. Würz, A. Ennaoui, M. Ch Lux-Steiner, T. P. Niesen, F. Karg

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Temperature-dependent current-voltage measurements are used to determine the dominant recombination mechanism in thin-film heterojunction solar cells based on Cu(In,Ga)(S,Se)2 absorbers with chemical bath deposited ZnS buffer layer. The measurements are carried out in the dark and under illumination in the temperature range 200-320 K. The activation energy of the recombination under illumination follows the absorber band gap energy E g = 1.07 eV of bulk Cu(In,Ga)(S,Se)2. The thermal dependence of the diode ideality factor is described by classical Shockley-Read-Hall (SRH) recombination via an exponential distribution of trap states in the bulk of the absorber. In the dark, the current flow is dominated by tunnelling enhanced bulk recombination with a tunnelling energy E 00 = 18 meV. Two activation energies higher than Eg, namely 1.21 and 1.40 eV, have been found. These results may be explained by dominant recombination in a region close to the surface of the Cu(In,Ga)(S,Se)2 absorber with an enlarged band gap. Thus, the electronic loss in the ZnO/Zn(S,OH)/Cu(In,Ga)(S,Se)2 solar cell takes place mainly in the absorber and is determined by tunnelling enhanced bulk recombination with a tunnelling energy E00 influenced by illumination.

Original languageEnglish
Pages (from-to)2037-2040
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number9-10
DOIs
Publication statusPublished - Sep 2003
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Rusu, M., Eisele, W., Würz, R., Ennaoui, A., Lux-Steiner, M. C., Niesen, T. P., & Karg, F. (2003). Current transport in ZnO/ZnS/Cu(In,Ga)(S,Se)2 solar cell. Journal of Physics and Chemistry of Solids, 64(9-10), 2037-2040. https://doi.org/10.1016/S0022-3697(03)00175-6