Crossover from photodarkening to photobleaching in a-GexSe 100-x thin films

Rakesh Ranjan Kumar, A. R. Barik, Vinod Madhavan, Mukund Bapna, K. S. Sangunni, K. V. Adarsh

Research output: Contribution to journalArticle

19 Citations (Scopus)


In this Letter, we present the interesting results of photodarkening (PD), transition toward photostability, and a slow crossover from PD to photobleaching when composition of the chalcogenide glassy thin film changes from Ge-deficient to rich. A subsequent Raman analysis on these as-prepared and irradiated samples provide the direct evidence of photoinduced structural rearrangement, i.e., photocrystallization of Se and the removal of edge-sharing GeSe 4 tetrahedra. Further, our experimental results clearly demonstrate that light-induced effects can be effectively controlled by choosing the right composition and provide valuable information on synthesizing photostable/ sensitive glasses.

Original languageEnglish
Pages (from-to)1682-1684
Number of pages3
JournalOptics Letters
Issue number10
Publication statusPublished - 15 May 2013
Externally publishedYes


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Kumar, R. R., Barik, A. R., Madhavan, V., Bapna, M., Sangunni, K. S., & Adarsh, K. V. (2013). Crossover from photodarkening to photobleaching in a-GexSe 100-x thin films. Optics Letters, 38(10), 1682-1684.