Correlation among channeling, morphological, and microstructural properties in epitaxial CeO 2 films

Laxmikant Saraf, D. E. McCready, V. Shutthanandan, C. M. Wang, M. H. Engelhard, S. Thevuthasan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A critical thickness of ∼64 nm is observed in epitaxial CeO 2 films grown at 750°C on yttrium-stabilized zirconia substrates where optimum ion channeling can be correlated with overall strain relaxation and low surface roughness. Saturation in backscattering yield, enhanced surface roughness, and strain relaxation is clearly evident in thicker films beyond this critical thickness. Despite excellent smoothness with epitaxial growth, films grown at 650°C did not show low backscattering due to high misfit-dislocation density. The results are discussed from the viewpoint of the need for an optimum thickness to develop multilayers with smooth interfaces, low backscattering with overall relaxation.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number5
DOIs
Publication statusPublished - 2006
Externally publishedYes

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Backscattering
Strain relaxation
backscattering
surface roughness
Surface roughness
Yttrium
yttrium
Dislocations (crystals)
Epitaxial growth
Thick films
zirconium oxides
Zirconia
thick films
Multilayers
Ions
saturation
Substrates
ions

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Correlation among channeling, morphological, and microstructural properties in epitaxial CeO 2 films. / Saraf, Laxmikant; McCready, D. E.; Shutthanandan, V.; Wang, C. M.; Engelhard, M. H.; Thevuthasan, S.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 5, 2006.

Research output: Contribution to journalArticle

Saraf, Laxmikant ; McCready, D. E. ; Shutthanandan, V. ; Wang, C. M. ; Engelhard, M. H. ; Thevuthasan, S. / Correlation among channeling, morphological, and microstructural properties in epitaxial CeO 2 films. In: Electrochemical and Solid-State Letters. 2006 ; Vol. 9, No. 5.
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