Correlation among channeling, morphological, and microstructural properties in epitaxial CeO 2 films

Laxmikant Saraf, D. E. McCready, V. Shutthanandan, C. M. Wang, M. H. Engelhard, S. Thevuthasan

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    5 Citations (Scopus)

    Abstract

    A critical thickness of ∼64 nm is observed in epitaxial CeO 2 films grown at 750°C on yttrium-stabilized zirconia substrates where optimum ion channeling can be correlated with overall strain relaxation and low surface roughness. Saturation in backscattering yield, enhanced surface roughness, and strain relaxation is clearly evident in thicker films beyond this critical thickness. Despite excellent smoothness with epitaxial growth, films grown at 650°C did not show low backscattering due to high misfit-dislocation density. The results are discussed from the viewpoint of the need for an optimum thickness to develop multilayers with smooth interfaces, low backscattering with overall relaxation.

    Original languageEnglish
    Pages (from-to)J17-J20
    JournalElectrochemical and Solid-State Letters
    Volume9
    Issue number5
    DOIs
    Publication statusPublished - 3 Apr 2006

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    ASJC Scopus subject areas

    • Chemical Engineering(all)
    • Materials Science(all)
    • Physical and Theoretical Chemistry
    • Electrochemistry
    • Electrical and Electronic Engineering

    Cite this

    Saraf, L., McCready, D. E., Shutthanandan, V., Wang, C. M., Engelhard, M. H., & Thevuthasan, S. (2006). Correlation among channeling, morphological, and microstructural properties in epitaxial CeO 2 films. Electrochemical and Solid-State Letters, 9(5), J17-J20. https://doi.org/10.1149/1.2186029