Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides

R. Pasternak, A. Chatterjee, Y. V. Shirokaya, B. K. Choi, Z. Marka, J. K. Miller, R. G. Albridge, Sergey Rashkeev, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, N. H. Tolk

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Radiation induced leakage current in a variable-thickness SiO 2-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results.

Original languageEnglish
Pages (from-to)1929-1933
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume50
Issue number6 I
DOIs
Publication statusPublished - 1 Dec 2003
Externally publishedYes

Fingerprint

Ultrafast lasers
Harmonic generation
Leakage currents
harmonic generations
leakage
Radiation
Oxides
oxides
radiation
lasers
direct current
Electric fields
injection
electric fields
Monitoring

Keywords

  • Laser measurements
  • Semiconductor device radiation effects
  • X-ray effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Pasternak, R., Chatterjee, A., Shirokaya, Y. V., Choi, B. K., Marka, Z., Miller, J. K., ... Tolk, N. H. (2003). Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides. IEEE Transactions on Nuclear Science, 50(6 I), 1929-1933. https://doi.org/10.1109/TNS.2003.821387

Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides. / Pasternak, R.; Chatterjee, A.; Shirokaya, Y. V.; Choi, B. K.; Marka, Z.; Miller, J. K.; Albridge, R. G.; Rashkeev, Sergey; Pantelides, S. T.; Schrimpf, R. D.; Fleetwood, D. M.; Tolk, N. H.

In: IEEE Transactions on Nuclear Science, Vol. 50, No. 6 I, 01.12.2003, p. 1929-1933.

Research output: Contribution to journalArticle

Pasternak, R, Chatterjee, A, Shirokaya, YV, Choi, BK, Marka, Z, Miller, JK, Albridge, RG, Rashkeev, S, Pantelides, ST, Schrimpf, RD, Fleetwood, DM & Tolk, NH 2003, 'Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides', IEEE Transactions on Nuclear Science, vol. 50, no. 6 I, pp. 1929-1933. https://doi.org/10.1109/TNS.2003.821387
Pasternak, R. ; Chatterjee, A. ; Shirokaya, Y. V. ; Choi, B. K. ; Marka, Z. ; Miller, J. K. ; Albridge, R. G. ; Rashkeev, Sergey ; Pantelides, S. T. ; Schrimpf, R. D. ; Fleetwood, D. M. ; Tolk, N. H. / Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides. In: IEEE Transactions on Nuclear Science. 2003 ; Vol. 50, No. 6 I. pp. 1929-1933.
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