Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides

R. Pasternak, A. Chatterjee, Y. V. Shirokaya, B. K. Choi, Z. Marka, J. K. Miller, R. G. Albridge, S. N. Rashkeev, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, N. H. Tolk

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2 Citations (Scopus)

Abstract

Radiation induced leakage current in a variable-thickness SiO 2-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results.

Original languageEnglish
Pages (from-to)1929-1933
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume50
Issue number6 I
DOIs
Publication statusPublished - 1 Dec 2003

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Keywords

  • Laser measurements
  • Semiconductor device radiation effects
  • X-ray effects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Pasternak, R., Chatterjee, A., Shirokaya, Y. V., Choi, B. K., Marka, Z., Miller, J. K., Albridge, R. G., Rashkeev, S. N., Pantelides, S. T., Schrimpf, R. D., Fleetwood, D. M., & Tolk, N. H. (2003). Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides. IEEE Transactions on Nuclear Science, 50(6 I), 1929-1933. https://doi.org/10.1109/TNS.2003.821387