Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy

Z. Q. Yu, Satyanarayana V.N.T. Kuchibhatla, L. V. Saraf, O. A. Marina, C. M. Wang, M. H. Engelhard, V. Shutthanandan, P. Nachimuthu, S. Thevuthasan

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    Abstract

    We have used oxygen-plasma-assisted molecular beam epitaxy to grow highly oriented Ce1-x Smx O2-δ films on single-crystal c- Al2 O3. The samarium concentration x was varied in the range of 1-33 atom %. It was observed that dominant (111) orientation in Ce1-x Smx O2-δ films can be maintained up to about 10 atom % samarium concentration. Films higher than 10 atom % Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S cm-1 at 600°C was observed for films with ∼5 atom % Sm concentration. A loss of orientation, triggering an enhanced grain-boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations.

    Original languageEnglish
    Pages (from-to)B76-B78
    JournalElectrochemical and Solid-State Letters
    Volume11
    Issue number5
    DOIs
    Publication statusPublished - 24 Mar 2008

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    ASJC Scopus subject areas

    • Chemical Engineering(all)
    • Materials Science(all)
    • Physical and Theoretical Chemistry
    • Electrochemistry
    • Electrical and Electronic Engineering

    Cite this

    Yu, Z. Q., Kuchibhatla, S. V. N. T., Saraf, L. V., Marina, O. A., Wang, C. M., Engelhard, M. H., Shutthanandan, V., Nachimuthu, P., & Thevuthasan, S. (2008). Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy. Electrochemical and Solid-State Letters, 11(5), B76-B78. https://doi.org/10.1149/1.2890122