Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy

Z. Q. Yu, Satyanarayana V N T Kuchibhatla, L. V. Saraf, O. A. Marina, C. M. Wang, M. H. Engelhard, V. Shutthanandan, P. Nachimuthu, S. Thevuthasan

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have used oxygen-plasma-assisted molecular beam epitaxy to grow highly oriented Ce1-x Smx O2-δ films on single-crystal c- Al2 O3. The samarium concentration x was varied in the range of 1-33 atom %. It was observed that dominant (111) orientation in Ce1-x Smx O2-δ films can be maintained up to about 10 atom % samarium concentration. Films higher than 10 atom % Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S cm-1 at 600°C was observed for films with ∼5 atom % Sm concentration. A loss of orientation, triggering an enhanced grain-boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number5
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint

Cerium compounds
oxygen plasma
Molecular beam epitaxy
molecular beam epitaxy
Samarium
Oxygen
Plasmas
atom concentration
Thin films
Atoms
conductivity
samarium
thin films
Crystal orientation
atoms
Grain boundaries
grain boundaries
Doping (additives)
Single crystals
Scattering

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Yu, Z. Q., Kuchibhatla, S. V. N. T., Saraf, L. V., Marina, O. A., Wang, C. M., Engelhard, M. H., ... Thevuthasan, S. (2008). Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy. Electrochemical and Solid-State Letters, 11(5). https://doi.org/10.1149/1.2890122

Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy. / Yu, Z. Q.; Kuchibhatla, Satyanarayana V N T; Saraf, L. V.; Marina, O. A.; Wang, C. M.; Engelhard, M. H.; Shutthanandan, V.; Nachimuthu, P.; Thevuthasan, S.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 5, 2008.

Research output: Contribution to journalArticle

Yu, ZQ, Kuchibhatla, SVNT, Saraf, LV, Marina, OA, Wang, CM, Engelhard, MH, Shutthanandan, V, Nachimuthu, P & Thevuthasan, S 2008, 'Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy', Electrochemical and Solid-State Letters, vol. 11, no. 5. https://doi.org/10.1149/1.2890122
Yu, Z. Q. ; Kuchibhatla, Satyanarayana V N T ; Saraf, L. V. ; Marina, O. A. ; Wang, C. M. ; Engelhard, M. H. ; Shutthanandan, V. ; Nachimuthu, P. ; Thevuthasan, S. / Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 11, No. 5.
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