We have used oxygen-plasma-assisted molecular beam epitaxy to grow highly oriented Ce1-x Smx O2-δ films on single-crystal c- Al2 O3. The samarium concentration x was varied in the range of 1-33 atom %. It was observed that dominant (111) orientation in Ce1-x Smx O2-δ films can be maintained up to about 10 atom % samarium concentration. Films higher than 10 atom % Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S cm-1 at 600°C was observed for films with ∼5 atom % Sm concentration. A loss of orientation, triggering an enhanced grain-boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering