Conducting transition metal nitride thin films with tailored cell sizes: The case of δ- Tix Ta1-x N

L. E. Koutsokeras, G. Abadias, Ch E. Lekka, G. M. Matenoglou, D. F. Anagnostopoulos, G. A. Evangelakis, P. Patsalas

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Abstract

We present results on the stability and tailoring of the cell size of conducting δ- Tix Ta1-x N obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard's rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ- Tix Ta1-x N films (ρ =180 cm) are similar to those of TiN and TaN.

Original languageEnglish
Article number011904
JournalApplied Physics Letters
Volume93
Issue number1
DOIs
Publication statusPublished - 21 Jul 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Koutsokeras, L. E., Abadias, G., Lekka, C. E., Matenoglou, G. M., Anagnostopoulos, D. F., Evangelakis, G. A., & Patsalas, P. (2008). Conducting transition metal nitride thin films with tailored cell sizes: The case of δ- Tix Ta1-x N. Applied Physics Letters, 93(1), [011904]. https://doi.org/10.1063/1.2955838