Computer simulations of interstitial loop growth kinetics in irradiated bcc Fe

Yulan Li, Shenyang Hu, Charles H. Henager, Huiqiu Deng, Fei Gao, Xin Sun, Moe A. Khaleel

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The growth kinetics of (0 0 1) [0 0 1] interstitial loops in bcc Fe is studied by phase-field modeling. The effect of defect (vacancy/interstitial) concentration, generation, recombination, sink strength, and elastic interaction on the growth kinetics of interstitial loops is systematically simulated. Results show that the elastic interaction between the defects and interstitial loops speeds up the growth kinetics and affects the morphology of the interstitial loops. Linear growth rate, i.e., the loop average radius is linear to time, under both aging and irradiation are predicted, which is in agreement with experimental observation. The results also show that the interstitial loop growth rate, which is directly related to the sink strength of the interstitial loop for interstitials, increases linearly with the initial interstitial concentration during aging while changing logarithmically with the interstitial generation rate under irradiation.

Original languageEnglish
Pages (from-to)259-267
Number of pages9
JournalJournal of Nuclear Materials
Issue number1-3
Publication statusPublished - 1 Aug 2012


ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Li, Y., Hu, S., Henager, C. H., Deng, H., Gao, F., Sun, X., & Khaleel, M. A. (2012). Computer simulations of interstitial loop growth kinetics in irradiated bcc Fe. Journal of Nuclear Materials, 427(1-3), 259-267.