Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography

Fang Liu, Li Huang, Robert F. Davis, Lisa M. Porter, Daniel K. Schreiber, Satyanarayana V N T Kuchibatla, Vaithiyalingam Shutthanandan, Suntharampillai Thevuthasan, Edward A. Preble, Tania Paskova, Keith R. Evans

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In<inf>0.20</inf>Ga<inf>0.80</inf>N/GaN multiquantum wells (MQWs) grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the first GaN barrier layer, which had an average root-mean-square roughness of 0.18 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering. High resolution Rutherford backscattering characterizations showed the ability to resolve the MQWs, and the resulting compositions and widths corroborated those determined from the atom probe analyses.

Original languageEnglish
Article number051209
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number5
DOIs
Publication statusPublished - 1 Sep 2014
Externally publishedYes

Fingerprint

Buffer layers
Tomography
tomography
Surface roughness
Atoms
probes
Rutherford backscattering spectroscopy
Substrates
roughness
buffers
Chemical analysis
Semiconductor quantum wells
atoms
barrier layers
backscattering
indication
quantum wells
high resolution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography. / Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibatla, Satyanarayana V N T; Shutthanandan, Vaithiyalingam; Thevuthasan, Suntharampillai; Preble, Edward A.; Paskova, Tania; Evans, Keith R.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 5, 051209, 01.09.2014.

Research output: Contribution to journalArticle

Liu, F, Huang, L, Davis, RF, Porter, LM, Schreiber, DK, Kuchibatla, SVNT, Shutthanandan, V, Thevuthasan, S, Preble, EA, Paskova, T & Evans, KR 2014, 'Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 32, no. 5, 051209. https://doi.org/10.1116/1.4893976
Liu, Fang ; Huang, Li ; Davis, Robert F. ; Porter, Lisa M. ; Schreiber, Daniel K. ; Kuchibatla, Satyanarayana V N T ; Shutthanandan, Vaithiyalingam ; Thevuthasan, Suntharampillai ; Preble, Edward A. ; Paskova, Tania ; Evans, Keith R. / Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2014 ; Vol. 32, No. 5.
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