Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering

K. Ellmer, D. Lichtenberger, A. Ennaoui, C. Hopfer, S. Fiechter, H. Tributsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A comparative study of undoped pyrite layers prepared by reactive magnetron sputtering (RMS), low pressure (LP) and normal pressure (NP) MOCVD has been undertaken for the first time. Stoichiometric pyrite films can be grown by all three methods but at different temperatures. For RMS where the sulphur partial pressure is low the growth temperature is limited to values below 200 °C. For MOCVD with partial pressures of the sulphur component between 2 mbar (LP) and 500 mbar (NP) pyrite could be prepared up to substrate temperatures of 600 °C. All films show p-type conductivity.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Pages535-538
Number of pages4
ISBN (Print)0780312201
Publication statusPublished - 1 Dec 1993
EventProceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA
Duration: 10 May 199314 May 1993

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

OtherProceedings of the 23rd IEEE Photovoltaic Specialists Conference
CityLouisville, KY, USA
Period10/5/9314/5/93

    Fingerprint

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Ellmer, K., Lichtenberger, D., Ennaoui, A., Hopfer, C., Fiechter, S., & Tributsch, H. (1993). Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 535-538). (Conference Record of the IEEE Photovoltaic Specialists Conference). Publ by IEEE.