Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering

K. Ellmer, D. Lichtenberger, A. Ennaoui, C. Hopfer, S. Fiechter, H. Tributsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A comparative study of undoped pyrite layers prepared by reactive magnetron sputtering (RMS), low pressure (LP) and normal pressure (NP) MOCVD has been undertaken for the first time. Stoichiometric pyrite films can be grown by all three methods but at different temperatures. For RMS where the sulphur partial pressure is low the growth temperature is limited to values below 200 °C. For MOCVD with partial pressures of the sulphur component between 2 mbar (LP) and 500 mbar (NP) pyrite could be prepared up to substrate temperatures of 600 °C. All films show p-type conductivity.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages535-538
Number of pages4
ISBN (Print)0780312201
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA
Duration: 10 May 199314 May 1993

Other

OtherProceedings of the 23rd IEEE Photovoltaic Specialists Conference
CityLouisville, KY, USA
Period10/5/9314/5/93

Fingerprint

Reactive sputtering
Pyrites
Metallorganic chemical vapor deposition
pyrites
Magnetron sputtering
metalorganic chemical vapor deposition
Structural properties
magnetron sputtering
Electric properties
low pressure
Optical properties
electrical properties
optical properties
partial pressure
sulfur
Partial pressure
Sulfur
temperature
Growth temperature
conductivity

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Ellmer, K., Lichtenberger, D., Ennaoui, A., Hopfer, C., Fiechter, S., & Tributsch, H. (1993). Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 535-538). Piscataway, NJ, United States: Publ by IEEE.

Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering. / Ellmer, K.; Lichtenberger, D.; Ennaoui, A.; Hopfer, C.; Fiechter, S.; Tributsch, H.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. p. 535-538.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ellmer, K, Lichtenberger, D, Ennaoui, A, Hopfer, C, Fiechter, S & Tributsch, H 1993, Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. Publ by IEEE, Piscataway, NJ, United States, pp. 535-538, Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, USA, 10/5/93.
Ellmer K, Lichtenberger D, Ennaoui A, Hopfer C, Fiechter S, Tributsch H. Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. Piscataway, NJ, United States: Publ by IEEE. 1993. p. 535-538
Ellmer, K. ; Lichtenberger, D. ; Ennaoui, A. ; Hopfer, C. ; Fiechter, S. ; Tributsch, H. / Comparison of structural, optical and electrical properties of pyrite (FeS2) layers prepared by MOCVD (normal and low pressure) and reactive magnetron sputtering. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. pp. 535-538
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