Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter

Yushan Liu, Baoming Ge, Haitham Abu-Rub, Haiyu Zhang, Robert Balog

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the characteristics of the SiC and GaN materials and devices are overviewed. A front-end isolated quasi-Z-source cascade multilevel inverter (qZS-CMI) based Photovoltaic (PV) power system is proposed to insulate the PV array from high voltage grid and make possible of PV grounding, thus to enhance the system reliability and safety. The SiC and GaN devices applied to the front-end isolation of qZS inverter module are compared. Experimental results verify the proposed front-end isolated qZS-CMI and comparison results, demonstrating a competitive solution for the future development of such inverters.

Original languageEnglish
Title of host publicationECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509007370
DOIs
Publication statusPublished - 13 Feb 2017
Event2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States
Duration: 18 Sep 201622 Sep 2016

Other

Other2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
CountryUnited States
CityMilwaukee
Period18/9/1622/9/16

Fingerprint

Gallium nitride
Nitrides
Inverter
Silicon carbide
Isolation
Silicon
Cascade
Switching frequency
Electric grounding
Semiconductor devices
Power electronics
Photovoltaic System
Power Electronics
Semiconductor Devices
System Reliability
Comparison Result
Energy gap
Band Gap
Power System
Safety

Keywords

  • cascade multilevel inverter
  • efficiency
  • gallium nitride
  • quasi-Z-source inverter
  • Silicon carbide

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Control and Optimization

Cite this

Liu, Y., Ge, B., Abu-Rub, H., Zhang, H., & Balog, R. (2017). Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. In ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings [7854942] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2016.7854942

Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. / Liu, Yushan; Ge, Baoming; Abu-Rub, Haitham; Zhang, Haiyu; Balog, Robert.

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7854942.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, Y, Ge, B, Abu-Rub, H, Zhang, H & Balog, R 2017, Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. in ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings., 7854942, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016, Milwaukee, United States, 18/9/16. https://doi.org/10.1109/ECCE.2016.7854942
Liu Y, Ge B, Abu-Rub H, Zhang H, Balog R. Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. In ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. 7854942 https://doi.org/10.1109/ECCE.2016.7854942
Liu, Yushan ; Ge, Baoming ; Abu-Rub, Haitham ; Zhang, Haiyu ; Balog, Robert. / Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017.
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