Comparison of GaN and SiC power devices in application to MW-scale quasi-Z-source cascaded multilevel inverters

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Wide bandgap (WBG) semiconductors including gallium nitride (GaN) and silicon carbide (SiC) offer significant performance improvement compared with conventional silicon power devices. The quasi-Z-source cascaded multilevel inverter (qZS-CMI) provides many advantages over the conventional CMI while applied in photovoltaic (PV) systems. In this paper, two solutions are proposed and compared to the design goal of a high efficiency and low-cost qZS-CMI based 1 MW/11 kV PV system. The first solution is based on 650 V GaN enhancement mode high-electron-mobility transistors (E-HEMT) and 650 V SiC Schottky diodes. The second solution uses 1200 V SiC power modules and 1200 V SiC Schottky diodes. The power losses and costs of the two candidate designs are compared in details. It is concluded that the first solution shows lower power losses and costs per quasi-Z-source inverter (qZSI) module. However, due to the low voltage rating of GaN E-HEMTs, more qZSI modules are needed to achieve the overall 11 kV inverter rating. Therefore, the second solution shows lower total power loss and cost in the medium-voltage, MW-scale qZS-CMI PV system.

Original languageEnglish
Title of host publicationECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509007370
DOIs
Publication statusPublished - 13 Feb 2017
Event2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States
Duration: 18 Sep 201622 Sep 2016

Other

Other2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
CountryUnited States
CityMilwaukee
Period18/9/1622/9/16

Fingerprint

Gallium nitride
Nitrides
Inverter
Silicon carbide
Silicon
Photovoltaic System
High electron mobility transistors
Costs
Diodes
Diode
Module
Lower Solution
Electric potential
Low Voltage
Energy gap
High Efficiency
Semiconductors
Semiconductor materials
Enhancement
Voltage

Keywords

  • Cascaded multilevel inverter
  • costs
  • gallium nitride
  • photovoltaic
  • power losses
  • quasi-Z-source
  • silicon carbide
  • wide bandgap

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Control and Optimization

Cite this

Zhang, H., Ge, B., Liu, Y., Bayhan, S., Balog, R., & Abu-Rub, H. (2017). Comparison of GaN and SiC power devices in application to MW-scale quasi-Z-source cascaded multilevel inverters. In ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings [7854940] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2016.7854940

Comparison of GaN and SiC power devices in application to MW-scale quasi-Z-source cascaded multilevel inverters. / Zhang, Haiyu; Ge, Baoming; Liu, Yushan; Bayhan, Sertac; Balog, Robert; Abu-Rub, Haitham.

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7854940.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, H, Ge, B, Liu, Y, Bayhan, S, Balog, R & Abu-Rub, H 2017, Comparison of GaN and SiC power devices in application to MW-scale quasi-Z-source cascaded multilevel inverters. in ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings., 7854940, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016, Milwaukee, United States, 18/9/16. https://doi.org/10.1109/ECCE.2016.7854940
Zhang H, Ge B, Liu Y, Bayhan S, Balog R, Abu-Rub H. Comparison of GaN and SiC power devices in application to MW-scale quasi-Z-source cascaded multilevel inverters. In ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. 7854940 https://doi.org/10.1109/ECCE.2016.7854940
Zhang, Haiyu ; Ge, Baoming ; Liu, Yushan ; Bayhan, Sertac ; Balog, Robert ; Abu-Rub, Haitham. / Comparison of GaN and SiC power devices in application to MW-scale quasi-Z-source cascaded multilevel inverters. ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017.
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abstract = "Wide bandgap (WBG) semiconductors including gallium nitride (GaN) and silicon carbide (SiC) offer significant performance improvement compared with conventional silicon power devices. The quasi-Z-source cascaded multilevel inverter (qZS-CMI) provides many advantages over the conventional CMI while applied in photovoltaic (PV) systems. In this paper, two solutions are proposed and compared to the design goal of a high efficiency and low-cost qZS-CMI based 1 MW/11 kV PV system. The first solution is based on 650 V GaN enhancement mode high-electron-mobility transistors (E-HEMT) and 650 V SiC Schottky diodes. The second solution uses 1200 V SiC power modules and 1200 V SiC Schottky diodes. The power losses and costs of the two candidate designs are compared in details. It is concluded that the first solution shows lower power losses and costs per quasi-Z-source inverter (qZSI) module. However, due to the low voltage rating of GaN E-HEMTs, more qZSI modules are needed to achieve the overall 11 kV inverter rating. Therefore, the second solution shows lower total power loss and cost in the medium-voltage, MW-scale qZS-CMI PV system.",
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