Cl2-based dry etching of doped manganate perovskites: PrBaCaMnO3 and LaSrMnO3

K. P. Lee, K. B. Jung, H. Cho, D. Kumar, S. V. Pietambaram, R. K. Singh, P. H. Hogan, K. H. Dahmen, Y. B. Hahn, S. J. Pearton

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Abstract

Effective pattern transfer into PrBaCaMnO3 and LaSrMnO3 has been achieved using Cl2/Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 angstroms min-1 for LaSrMnO3 and 300 angstroms min-1 for PrBaCaMnO3 were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 μm) features have been produced in both materials using SiNx as the mask.

Original languageEnglish
Pages (from-to)2748-2751
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number7
DOIs
Publication statusPublished - 1 Jul 1999
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Lee, K. P., Jung, K. B., Cho, H., Kumar, D., Pietambaram, S. V., Singh, R. K., Hogan, P. H., Dahmen, K. H., Hahn, Y. B., & Pearton, S. J. (1999). Cl2-based dry etching of doped manganate perovskites: PrBaCaMnO3 and LaSrMnO3. Journal of the Electrochemical Society, 146(7), 2748-2751. https://doi.org/10.1149/1.1392004