Cleaving oxide films using hydrogen implantation

S. Thevuthasan, W. Jiang, W. J. Weber

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Precise cleaving of oxide films with known thickness using hydrogen implantation and subsequent annealing was investigated using strontium titanate (SrTiO3) as a model material. Rutherford backscattering in channeling geometry (RBS/C), nuclear reaction analysis (NRA), and scanning electron microscopy (SEM) have been used to characterize this process.

Original languageEnglish
Pages (from-to)313-317
Number of pages5
JournalMaterials Letters
Volume49
Issue number6
DOIs
Publication statusPublished - Jul 2001
Externally publishedYes

Fingerprint

Nuclear reactions
Rutherford backscattering spectroscopy
Strontium
nuclear reactions
strontium
Oxide films
oxide films
Hydrogen
implantation
backscattering
Annealing
Scanning electron microscopy
scanning electron microscopy
annealing
Geometry
hydrogen
geometry
strontium titanium oxide

Keywords

  • Cleaving oxide film
  • Damage accumulation
  • Hydrogen
  • Ion scattering
  • Nuclear reaction analysis (NRA)
  • Rutherford backscattering spectrometry (RBS)
  • Strontium titanate (SrTiO)

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Cleaving oxide films using hydrogen implantation. / Thevuthasan, S.; Jiang, W.; Weber, W. J.

In: Materials Letters, Vol. 49, No. 6, 07.2001, p. 313-317.

Research output: Contribution to journalArticle

Thevuthasan, S, Jiang, W & Weber, WJ 2001, 'Cleaving oxide films using hydrogen implantation', Materials Letters, vol. 49, no. 6, pp. 313-317. https://doi.org/10.1016/S0167-577X(00)00391-8
Thevuthasan, S. ; Jiang, W. ; Weber, W. J. / Cleaving oxide films using hydrogen implantation. In: Materials Letters. 2001 ; Vol. 49, No. 6. pp. 313-317.
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