Cleaving oxide films using hydrogen implantation

S. Thevuthasan, W. Jiang, W. J. Weber

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Precise cleaving of oxide films with known thickness using hydrogen implantation and subsequent annealing was investigated using strontium titanate (SrTiO3) as a model material. Rutherford backscattering in channeling geometry (RBS/C), nuclear reaction analysis (NRA), and scanning electron microscopy (SEM) have been used to characterize this process.

Original languageEnglish
Pages (from-to)313-317
Number of pages5
JournalMaterials Letters
Issue number6
Publication statusPublished - Jul 2001
Externally publishedYes



  • Cleaving oxide film
  • Damage accumulation
  • Hydrogen
  • Ion scattering
  • Nuclear reaction analysis (NRA)
  • Rutherford backscattering spectrometry (RBS)
  • Strontium titanate (SrTiO)

ASJC Scopus subject areas

  • Materials Science(all)

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