Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces

Rodrigo Sáez-Araoz, Iver Lauermann, Axel Neisser, Martha Ch Lux-Steiner, Ahmed Ennaoui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the chemical deposition and electronic properties of CuInS2/Zn(S,O) interfaces. The Zn(S,O) buffer was grown by a new chemical bath deposition (CBD) process that allows the tailoring of the S/O ratio in the films. Resulting Zn(S,O) films exhibit transparencies above 80% (for λ>390 nm) and an optical energy band gap of 3.9 eV which decreases to 3.6 eV after annealing in air at 200°C Production line CuInS2 (CIS) absorbers provided by Sulfurcell Solartechnik GmbH are used as substrates for the investigation of the CIS/Zn(S,O) interface and the chemical composition of Zn(S,O). A ZnS/(ZnS+ZnO) ratio of 0.5 is found by X-ray photoelectron spectroscopy and X-ray excited Auger electron spectroscopy (XPS and XAES). The valence band offset between the heterojunction partners (ΔEv =1.8 ± 0.2 eV) has been determined by means of XPS and ultraviolet photoelectron spectroscopy (UPS). Considering the energy band gap of the CIS absorber and the measured band gap of Zn(S,O), the conduction band offset (ΔEC) is calculated as: ΔEC=E g Zn(S,O)-Eg CIS-ΔEv resulting in a spike of 0.5±0.3 eV in the conduction band at the heterojunction before annealing. After the heat treatment, the valence band offset is reduced to 1.5±0.2 eV and the calculated conduction band offset remains at 0.5±0.3 eV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages101-107
Number of pages7
Volume1165
Publication statusPublished - 2010
Externally publishedYes
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 13 Apr 200917 Apr 2009

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/0917/4/09

Fingerprint

Conduction bands
Electronic properties
conduction bands
chemical composition
Energy gap
Valence bands
Band structure
energy bands
Heterojunctions
heterojunctions
absorbers
X ray photoelectron spectroscopy
Chemical analysis
electronics
photoelectron spectroscopy
Annealing
Ultraviolet photoelectron spectroscopy
valence
annealing
ultraviolet spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Sáez-Araoz, R., Lauermann, I., Neisser, A., Lux-Steiner, M. C., & Ennaoui, A. (2010). Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces. In Materials Research Society Symposium Proceedings (Vol. 1165, pp. 101-107)

Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces. / Sáez-Araoz, Rodrigo; Lauermann, Iver; Neisser, Axel; Lux-Steiner, Martha Ch; Ennaoui, Ahmed.

Materials Research Society Symposium Proceedings. Vol. 1165 2010. p. 101-107.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sáez-Araoz, R, Lauermann, I, Neisser, A, Lux-Steiner, MC & Ennaoui, A 2010, Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces. in Materials Research Society Symposium Proceedings. vol. 1165, pp. 101-107, 2009 MRS Spring Meeting, San Francisco, CA, United States, 13/4/09.
Sáez-Araoz R, Lauermann I, Neisser A, Lux-Steiner MC, Ennaoui A. Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces. In Materials Research Society Symposium Proceedings. Vol. 1165. 2010. p. 101-107
Sáez-Araoz, Rodrigo ; Lauermann, Iver ; Neisser, Axel ; Lux-Steiner, Martha Ch ; Ennaoui, Ahmed. / Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces. Materials Research Society Symposium Proceedings. Vol. 1165 2010. pp. 101-107
@inproceedings{421cb5079e8549d7b1129a7a1a8d4563,
title = "Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces",
abstract = "We report on the chemical deposition and electronic properties of CuInS2/Zn(S,O) interfaces. The Zn(S,O) buffer was grown by a new chemical bath deposition (CBD) process that allows the tailoring of the S/O ratio in the films. Resulting Zn(S,O) films exhibit transparencies above 80{\%} (for λ>390 nm) and an optical energy band gap of 3.9 eV which decreases to 3.6 eV after annealing in air at 200°C Production line CuInS2 (CIS) absorbers provided by Sulfurcell Solartechnik GmbH are used as substrates for the investigation of the CIS/Zn(S,O) interface and the chemical composition of Zn(S,O). A ZnS/(ZnS+ZnO) ratio of 0.5 is found by X-ray photoelectron spectroscopy and X-ray excited Auger electron spectroscopy (XPS and XAES). The valence band offset between the heterojunction partners (ΔEv =1.8 ± 0.2 eV) has been determined by means of XPS and ultraviolet photoelectron spectroscopy (UPS). Considering the energy band gap of the CIS absorber and the measured band gap of Zn(S,O), the conduction band offset (ΔEC) is calculated as: ΔEC=E g Zn(S,O)-Eg CIS-ΔEv resulting in a spike of 0.5±0.3 eV in the conduction band at the heterojunction before annealing. After the heat treatment, the valence band offset is reduced to 1.5±0.2 eV and the calculated conduction band offset remains at 0.5±0.3 eV.",
author = "Rodrigo S{\'a}ez-Araoz and Iver Lauermann and Axel Neisser and Lux-Steiner, {Martha Ch} and Ahmed Ennaoui",
year = "2010",
language = "English",
isbn = "9781605111384",
volume = "1165",
pages = "101--107",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces

AU - Sáez-Araoz, Rodrigo

AU - Lauermann, Iver

AU - Neisser, Axel

AU - Lux-Steiner, Martha Ch

AU - Ennaoui, Ahmed

PY - 2010

Y1 - 2010

N2 - We report on the chemical deposition and electronic properties of CuInS2/Zn(S,O) interfaces. The Zn(S,O) buffer was grown by a new chemical bath deposition (CBD) process that allows the tailoring of the S/O ratio in the films. Resulting Zn(S,O) films exhibit transparencies above 80% (for λ>390 nm) and an optical energy band gap of 3.9 eV which decreases to 3.6 eV after annealing in air at 200°C Production line CuInS2 (CIS) absorbers provided by Sulfurcell Solartechnik GmbH are used as substrates for the investigation of the CIS/Zn(S,O) interface and the chemical composition of Zn(S,O). A ZnS/(ZnS+ZnO) ratio of 0.5 is found by X-ray photoelectron spectroscopy and X-ray excited Auger electron spectroscopy (XPS and XAES). The valence band offset between the heterojunction partners (ΔEv =1.8 ± 0.2 eV) has been determined by means of XPS and ultraviolet photoelectron spectroscopy (UPS). Considering the energy band gap of the CIS absorber and the measured band gap of Zn(S,O), the conduction band offset (ΔEC) is calculated as: ΔEC=E g Zn(S,O)-Eg CIS-ΔEv resulting in a spike of 0.5±0.3 eV in the conduction band at the heterojunction before annealing. After the heat treatment, the valence band offset is reduced to 1.5±0.2 eV and the calculated conduction band offset remains at 0.5±0.3 eV.

AB - We report on the chemical deposition and electronic properties of CuInS2/Zn(S,O) interfaces. The Zn(S,O) buffer was grown by a new chemical bath deposition (CBD) process that allows the tailoring of the S/O ratio in the films. Resulting Zn(S,O) films exhibit transparencies above 80% (for λ>390 nm) and an optical energy band gap of 3.9 eV which decreases to 3.6 eV after annealing in air at 200°C Production line CuInS2 (CIS) absorbers provided by Sulfurcell Solartechnik GmbH are used as substrates for the investigation of the CIS/Zn(S,O) interface and the chemical composition of Zn(S,O). A ZnS/(ZnS+ZnO) ratio of 0.5 is found by X-ray photoelectron spectroscopy and X-ray excited Auger electron spectroscopy (XPS and XAES). The valence band offset between the heterojunction partners (ΔEv =1.8 ± 0.2 eV) has been determined by means of XPS and ultraviolet photoelectron spectroscopy (UPS). Considering the energy band gap of the CIS absorber and the measured band gap of Zn(S,O), the conduction band offset (ΔEC) is calculated as: ΔEC=E g Zn(S,O)-Eg CIS-ΔEv resulting in a spike of 0.5±0.3 eV in the conduction band at the heterojunction before annealing. After the heat treatment, the valence band offset is reduced to 1.5±0.2 eV and the calculated conduction band offset remains at 0.5±0.3 eV.

UR - http://www.scopus.com/inward/record.url?scp=77952012954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952012954&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781605111384

VL - 1165

SP - 101

EP - 107

BT - Materials Research Society Symposium Proceedings

ER -