Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.
- Radiation effects
- Second harmonic generation (SHG)
- Silicon on insulator (SOI)
- Total dose
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering