Charge trapping in irradiated SOI wafers measured by second harmonic generation

Bongim Jun, Ronald D. Schrimpf, Daniel M. Fleetwood, Yelena V. White, Robert Pasternak, Sergey Rashkeev, Francois Brunier, Nicolas Bresson, Marion Fouillat, Sorin Cristoloveanu, Norman H. Tolk

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Abstract

Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.

Original languageEnglish
Pages (from-to)3231-3237
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 II
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes

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Keywords

  • Pseudo-MOSFET
  • Radiation effects
  • Second harmonic generation (SHG)
  • Silicon on insulator (SOI)
  • Total dose
  • UNIBOND

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Jun, B., Schrimpf, R. D., Fleetwood, D. M., White, Y. V., Pasternak, R., Rashkeev, S., Brunier, F., Bresson, N., Fouillat, M., Cristoloveanu, S., & Tolk, N. H. (2004). Charge trapping in irradiated SOI wafers measured by second harmonic generation. IEEE Transactions on Nuclear Science, 51(6 II), 3231-3237. https://doi.org/10.1109/TNS.2004.839140