Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation

Z. Marka, S. K. Singh, W. Wang, S. C. Lee, J. Kavich, B. Glebov, S. N. Rashkeev, A. P. Karmarkar, R. G. Albridge, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, N. H. Tolk

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

We report the first application of second-harmonic generation (SHG) measurements for the characterization of X-ray radiation damage in Si/SiO2 structures. The main advantage of this experimental technique is that it is noninvasive, contactless, and sensitive to the electric field at the interface. Interaction of intense 800 nm femtosecond laser pulses with Si/SiO2 structures results in electron-hole pair creation in the Si, multiphoton carrier injection and second-harmonic generation. The time-dependent second-harmonic (doubled frequency) signal is a measure of the dynamic electric field at the interface. This dynamic field is created and altered by unequal electron-hole injection into the oxide, trapping/detrapping of charges, and carrier recombination processes. We find that the SHG response from Si/SiO2 samples before and after X-ray irradiation is significantly different. Thus, SHG is a promising technique for the characterization of radiation damage in Si/SiO2 structures. In particular, SHG is especially useful in characterizing damage in ultrathin oxide layers, for which conventional electrical measurements may not be sufficiently sensitive to the kinds of defects observable via optical methods.

Original languageEnglish
Pages (from-to)2256-2261
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number6 III
DOIs
Publication statusPublished - 1 Dec 2000
Event2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States
Duration: 24 Jul 200028 Jul 2000

    Fingerprint

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Marka, Z., Singh, S. K., Wang, W., Lee, S. C., Kavich, J., Glebov, B., Rashkeev, S. N., Karmarkar, A. P., Albridge, R. G., Pantelides, S. T., Schrimpf, R. D., Fleetwood, D. M., & Tolk, N. H. (2000). Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation. IEEE Transactions on Nuclear Science, 47(6 III), 2256-2261. https://doi.org/10.1109/23.903762