Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation

Z. Marka, S. K. Singh, W. Wang, S. C. Lee, J. Kavich, B. Glebov, Sergey Rashkeev, A. P. Karmarkar, R. G. Albridge, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, N. H. Tolk

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report the first application of second-harmonic generation (SHG) measurements for the characterization of X-ray radiation damage in Si/SiO2 structures. The main advantage of this experimental technique is that it is noninvasive, contactless, and sensitive to the electric field at the interface. Interaction of intense 800 nm femtosecond laser pulses with Si/SiO2 structures results in electron-hole pair creation in the Si, multiphoton carrier injection and second-harmonic generation. The time-dependent second-harmonic (doubled frequency) signal is a measure of the dynamic electric field at the interface. This dynamic field is created and altered by unequal electron-hole injection into the oxide, trapping/detrapping of charges, and carrier recombination processes. We find that the SHG response from Si/SiO2 samples before and after X-ray irradiation is significantly different. Thus, SHG is a promising technique for the characterization of radiation damage in Si/SiO2 structures. In particular, SHG is especially useful in characterizing damage in ultrathin oxide layers, for which conventional electrical measurements may not be sufficiently sensitive to the kinds of defects observable via optical methods.

Original languageEnglish
Pages (from-to)2256-2261
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number6 III
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes

Fingerprint

Radiation damage
Harmonic generation
radiation damage
harmonic generations
X rays
x rays
Electric fields
Oxides
oxides
electric fields
Electrons
carrier injection
Ultrashort pulses
electrical measurement
trapping
Irradiation
optics
injection
damage
harmonics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Marka, Z., Singh, S. K., Wang, W., Lee, S. C., Kavich, J., Glebov, B., ... Tolk, N. H. (2000). Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation. IEEE Transactions on Nuclear Science, 47(6 III), 2256-2261. https://doi.org/10.1109/23.903762

Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation. / Marka, Z.; Singh, S. K.; Wang, W.; Lee, S. C.; Kavich, J.; Glebov, B.; Rashkeev, Sergey; Karmarkar, A. P.; Albridge, R. G.; Pantelides, S. T.; Schrimpf, R. D.; Fleetwood, D. M.; Tolk, N. H.

In: IEEE Transactions on Nuclear Science, Vol. 47, No. 6 III, 01.12.2000, p. 2256-2261.

Research output: Contribution to journalArticle

Marka, Z, Singh, SK, Wang, W, Lee, SC, Kavich, J, Glebov, B, Rashkeev, S, Karmarkar, AP, Albridge, RG, Pantelides, ST, Schrimpf, RD, Fleetwood, DM & Tolk, NH 2000, 'Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation', IEEE Transactions on Nuclear Science, vol. 47, no. 6 III, pp. 2256-2261. https://doi.org/10.1109/23.903762
Marka, Z. ; Singh, S. K. ; Wang, W. ; Lee, S. C. ; Kavich, J. ; Glebov, B. ; Rashkeev, Sergey ; Karmarkar, A. P. ; Albridge, R. G. ; Pantelides, S. T. ; Schrimpf, R. D. ; Fleetwood, D. M. ; Tolk, N. H. / Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation. In: IEEE Transactions on Nuclear Science. 2000 ; Vol. 47, No. 6 III. pp. 2256-2261.
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