Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells

B. R. Sankapal, A. Ennaoui, T. Guminskaya, Th Dittrich, W. Bohne, J. Röhrich, E. Strub, M. Ch Lux-Steiner

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

CuI has been synthesized at room temperature on Cu-tape/n-CuInS2 by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the CuI has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The CuI films contain the γ-phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense CuI film with larger crystallites. Oxides could not be detected on the CuI surface. The density of surface states of CIS decreased after the CuI deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS 2/p-CuI solar cells has been demonstrated.

Original languageEnglish
Pages (from-to)142-146
Number of pages5
JournalThin Solid Films
Volume480-481
DOIs
Publication statusPublished - 1 Jun 2005
Externally publishedYes

Fingerprint

Iodine
Tapes
tapes
Solar cells
solar cells
iodine
Crystallites
crystallites
Surface states
Commonwealth of Independent States
Oxides
Surface morphology
photovoltages
X ray photoelectron spectroscopy
Transmission electron microscopy
Adsorption
X ray diffraction
Scanning electron microscopy
x rays
photoelectron spectroscopy

Keywords

  • Characterizations
  • p-type CuI
  • SILAR
  • Solar cell

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Sankapal, B. R., Ennaoui, A., Guminskaya, T., Dittrich, T., Bohne, W., Röhrich, J., ... Lux-Steiner, M. C. (2005). Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells. Thin Solid Films, 480-481, 142-146. https://doi.org/10.1016/j.tsf.2004.11.020

Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells. / Sankapal, B. R.; Ennaoui, A.; Guminskaya, T.; Dittrich, Th; Bohne, W.; Röhrich, J.; Strub, E.; Lux-Steiner, M. Ch.

In: Thin Solid Films, Vol. 480-481, 01.06.2005, p. 142-146.

Research output: Contribution to journalArticle

Sankapal, BR, Ennaoui, A, Guminskaya, T, Dittrich, T, Bohne, W, Röhrich, J, Strub, E & Lux-Steiner, MC 2005, 'Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells', Thin Solid Films, vol. 480-481, pp. 142-146. https://doi.org/10.1016/j.tsf.2004.11.020
Sankapal, B. R. ; Ennaoui, A. ; Guminskaya, T. ; Dittrich, Th ; Bohne, W. ; Röhrich, J. ; Strub, E. ; Lux-Steiner, M. Ch. / Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells. In: Thin Solid Films. 2005 ; Vol. 480-481. pp. 142-146.
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