Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells

B. R. Sankapal, A. Ennaoui, T. Guminskaya, Th Dittrich, W. Bohne, J. Röhrich, E. Strub, M. Ch Lux-Steiner

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Abstract

CuI has been synthesized at room temperature on Cu-tape/n-CuInS2 by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the CuI has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The CuI films contain the γ-phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense CuI film with larger crystallites. Oxides could not be detected on the CuI surface. The density of surface states of CIS decreased after the CuI deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS 2/p-CuI solar cells has been demonstrated.

Original languageEnglish
Pages (from-to)142-146
Number of pages5
JournalThin Solid Films
Volume480-481
DOIs
Publication statusPublished - 1 Jun 2005

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Keywords

  • Characterizations
  • SILAR
  • Solar cell
  • p-type CuI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Sankapal, B. R., Ennaoui, A., Guminskaya, T., Dittrich, T., Bohne, W., Röhrich, J., Strub, E., & Lux-Steiner, M. C. (2005). Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells. Thin Solid Films, 480-481, 142-146. https://doi.org/10.1016/j.tsf.2004.11.020