Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime

Maulid Kivambe, Douglas M. Powell, Sergio Castellanos, Mallory Ann Jensen, Ashley E. Morishige, Barry Lai, Ruiying Hao, T. S. Ravi, Tonio Buonassisi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigate the types and origins of structural defects in thin (<100 µm) kerfless epitaxial single crystal silicon grown on top of reorganized porous silicon layers. Although the structural defect density is low (has average defect density < 104 cm−2), localized areas with a defect density > 105 cm−2 are observed. Cross-sectional and systematic plan-view defect etching and microscopy reveals that the majority of stacking faults and dislocations originate at the interface between the porous silicon layer and the epitaxial wafer. Localised dislocation clusters are observed in regions of collapsed/deformed porous silicon and at decorated stacking faults. In localized regions of high extended defect density, increased minority-carrier recombination activity is observed. Evidence for impurity segregation to the extended defects (internal gettering), which is known to exacerbate carrier recombination is demonstrated. The impact of the defects on material performance and substrate re-use is also discussed.

Original languageEnglish
Pages (from-to)57-64
Number of pages8
JournalJournal of Crystal Growth
Volume483
DOIs
Publication statusPublished - 1 Feb 2018

Fingerprint

Carrier lifetime
Silicon
carrier lifetime
minority carriers
Solar cells
solar cells
Defects
Porous silicon
defects
Stacking faults
silicon
porous silicon
crystal defects
Defect density
Dislocations (crystals)
reuse
Etching
Microscopic examination
Impurities
etching

Keywords

  • A1. Impurities
  • A1. Line defects
  • A3. Chemical vapor deposition processes
  • A3. Epitaxial silicon
  • B2. Semiconducting silicon
  • B3. Photovoltaics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Characterization of high-quality kerfless epitaxial silicon for solar cells : Defect sources and impact on minority-carrier lifetime. / Kivambe, Maulid; Powell, Douglas M.; Castellanos, Sergio; Jensen, Mallory Ann; Morishige, Ashley E.; Lai, Barry; Hao, Ruiying; Ravi, T. S.; Buonassisi, Tonio.

In: Journal of Crystal Growth, Vol. 483, 01.02.2018, p. 57-64.

Research output: Contribution to journalArticle

Kivambe, Maulid ; Powell, Douglas M. ; Castellanos, Sergio ; Jensen, Mallory Ann ; Morishige, Ashley E. ; Lai, Barry ; Hao, Ruiying ; Ravi, T. S. ; Buonassisi, Tonio. / Characterization of high-quality kerfless epitaxial silicon for solar cells : Defect sources and impact on minority-carrier lifetime. In: Journal of Crystal Growth. 2018 ; Vol. 483. pp. 57-64.
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AU - Morishige, Ashley E.

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