Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Yu D. Glinka, W. Wang, S. K. Singh, Z. Marka, Sergey Rashkeev, Y. Shirokaya, R. Albridge, S. T. Pantelides, N. H. Tolk, G. Lucovsky

Research output: Contribution to journalArticle

Abstract

First measurements of time-dependent second-harmonic generation (SHG) at a (formula presented) interface show a behavior that is drastically different from similar measurements at (formula presented) interfaces. We suggest that in (formula presented) only electron injection is important, while both electrons and holes contribute to the dynamics at the (formula presented) interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multiphoton excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number19
DOIs
Publication statusPublished - 1 Jan 2002

Fingerprint

Silicon
Harmonic generation
Charge carriers
Oxides
charge carriers
harmonic generations
oxides
silicon
Electron injection
Valence bands
Conduction bands
Excited states
excitation
electrons
Electrons
trapping
injection
valence
conduction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. / Glinka, Yu D.; Wang, W.; Singh, S. K.; Marka, Z.; Rashkeev, Sergey; Shirokaya, Y.; Albridge, R.; Pantelides, S. T.; Tolk, N. H.; Lucovsky, G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 19, 01.01.2002, p. 1-4.

Research output: Contribution to journalArticle

Glinka, YD, Wang, W, Singh, SK, Marka, Z, Rashkeev, S, Shirokaya, Y, Albridge, R, Pantelides, ST, Tolk, NH & Lucovsky, G 2002, 'Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation', Physical Review B - Condensed Matter and Materials Physics, vol. 65, no. 19, pp. 1-4. https://doi.org/10.1103/PhysRevB.65.193103
Glinka, Yu D. ; Wang, W. ; Singh, S. K. ; Marka, Z. ; Rashkeev, Sergey ; Shirokaya, Y. ; Albridge, R. ; Pantelides, S. T. ; Tolk, N. H. ; Lucovsky, G. / Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 65, No. 19. pp. 1-4.
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