Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Yu D. Glinka, W. Wang, S. K. Singh, Z. Marka, Sergey Rashkeev, Y. Shirokaya, R. Albridge, S. T. Pantelides, N. H. Tolk, G. Lucovsky

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

First measurements of time-dependent second-harmonic generation (SHG) at a Si/(ZrO2)x(SiO2)1-x interface show a behavior that is drastically different from similar measurements at Si/SiO2 interfaces. We suggest that in Si/SiO2 only electron injection is important, while both electrons and holes contribute to the dynamics at the Si/(ZrO2)x(SiO2)1-x interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multiphoton excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.

Original languageEnglish
Article number193103
Pages (from-to)1931031-1931034
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number19
Publication statusPublished - 15 May 2002
Externally publishedYes

Fingerprint

Silicon
Harmonic generation
Charge carriers
Oxides
charge carriers
harmonic generations
oxides
silicon
Electron injection
Valence bands
Conduction bands
Excited states
excitation
electrons
Electrons
trapping
injection
valence
conduction

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Glinka, Y. D., Wang, W., Singh, S. K., Marka, Z., Rashkeev, S., Shirokaya, Y., ... Lucovsky, G. (2002). Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. Physical Review B - Condensed Matter and Materials Physics, 65(19), 1931031-1931034. [193103].

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. / Glinka, Yu D.; Wang, W.; Singh, S. K.; Marka, Z.; Rashkeev, Sergey; Shirokaya, Y.; Albridge, R.; Pantelides, S. T.; Tolk, N. H.; Lucovsky, G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 19, 193103, 15.05.2002, p. 1931031-1931034.

Research output: Contribution to journalArticle

Glinka, YD, Wang, W, Singh, SK, Marka, Z, Rashkeev, S, Shirokaya, Y, Albridge, R, Pantelides, ST, Tolk, NH & Lucovsky, G 2002, 'Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation', Physical Review B - Condensed Matter and Materials Physics, vol. 65, no. 19, 193103, pp. 1931031-1931034.
Glinka, Yu D. ; Wang, W. ; Singh, S. K. ; Marka, Z. ; Rashkeev, Sergey ; Shirokaya, Y. ; Albridge, R. ; Pantelides, S. T. ; Tolk, N. H. ; Lucovsky, G. / Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 65, No. 19. pp. 1931031-1931034.
@article{26c33bc14552404a98b06c25006dc5d3,
title = "Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation",
abstract = "First measurements of time-dependent second-harmonic generation (SHG) at a Si/(ZrO2)x(SiO2)1-x interface show a behavior that is drastically different from similar measurements at Si/SiO2 interfaces. We suggest that in Si/SiO2 only electron injection is important, while both electrons and holes contribute to the dynamics at the Si/(ZrO2)x(SiO2)1-x interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multiphoton excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.",
author = "Glinka, {Yu D.} and W. Wang and Singh, {S. K.} and Z. Marka and Sergey Rashkeev and Y. Shirokaya and R. Albridge and Pantelides, {S. T.} and Tolk, {N. H.} and G. Lucovsky",
year = "2002",
month = "5",
day = "15",
language = "English",
volume = "65",
pages = "1931031--1931034",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

AU - Glinka, Yu D.

AU - Wang, W.

AU - Singh, S. K.

AU - Marka, Z.

AU - Rashkeev, Sergey

AU - Shirokaya, Y.

AU - Albridge, R.

AU - Pantelides, S. T.

AU - Tolk, N. H.

AU - Lucovsky, G.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - First measurements of time-dependent second-harmonic generation (SHG) at a Si/(ZrO2)x(SiO2)1-x interface show a behavior that is drastically different from similar measurements at Si/SiO2 interfaces. We suggest that in Si/SiO2 only electron injection is important, while both electrons and holes contribute to the dynamics at the Si/(ZrO2)x(SiO2)1-x interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multiphoton excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.

AB - First measurements of time-dependent second-harmonic generation (SHG) at a Si/(ZrO2)x(SiO2)1-x interface show a behavior that is drastically different from similar measurements at Si/SiO2 interfaces. We suggest that in Si/SiO2 only electron injection is important, while both electrons and holes contribute to the dynamics at the Si/(ZrO2)x(SiO2)1-x interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multiphoton excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.

UR - http://www.scopus.com/inward/record.url?scp=0037092745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037092745&partnerID=8YFLogxK

M3 - Article

VL - 65

SP - 1931031

EP - 1931034

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 19

M1 - 193103

ER -