Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Yu D. Glinka, W. Wang, S. K. Singh, Z. Marka, Sergey Rashkeev, Y. Shirokaya, R. Albridge, S. T. Pantelides, N. H. Tolk, G. Lucovsky

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Abstract

First measurements of time-dependent second-harmonic generation (SHG) at a Si/(ZrO2)x(SiO2)1-x interface show a behavior that is drastically different from similar measurements at Si/SiO2 interfaces. We suggest that in Si/SiO2 only electron injection is important, while both electrons and holes contribute to the dynamics at the Si/(ZrO2)x(SiO2)1-x interface. Multiphoton excitation occurs in Si for all oxides, and involves direct interband transitions. The marked difference between the two systems is related to the population of multiphoton excited states in Si, the corresponding conduction- and valence-band offsets, and trapping/detrapping processes in the oxides. Our measurements confirm the existence of an initial built-in field at the interface.

Original languageEnglish
Article number193103
Pages (from-to)1931031-1931034
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number19
Publication statusPublished - 15 May 2002
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Glinka, Y. D., Wang, W., Singh, S. K., Marka, Z., Rashkeev, S., Shirokaya, Y., Albridge, R., Pantelides, S. T., Tolk, N. H., & Lucovsky, G. (2002). Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. Physical Review B - Condensed Matter and Materials Physics, 65(19), 1931031-1931034. [193103].