Characterization of amorphous zinc tin oxide semiconductors

Jaana S. Rajachidambaram, Shail Sanghavi, Ponnusamy Nachimuthu, Vaithiyalingam Shutthanandan, Tamas Varga, Brendan Flynn, Suntharampillai Thevuthasan, Gregory S. Herman

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and postannealing conditions on film structure, composition, surface contamination, and thin-film transistor (TFT) performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. Rutherford backscattering spectrometry indicated that the bulk Zn:Sn ratio of the sputter-deposited films were slightly tin rich compared to the composition of the ceramic sputter target. X-ray photoelectron spectroscopy indicated that residual surface contamination depended strongly on the sample postannealing conditions where water, carbonate, and hydroxyl species were adsorbed to the surface. Electrical characterization of ZTO TFTs indicated that the best devices had mobilities of 17 cm 2/Vs, threshold voltages of-1.5 V, subthreshold slopes of 0.9 V/dec, turn-on voltages of-12 V, and on-to-off ratio of >10 7. Annealing ZTO in vacuum assisted in the removal of adsorbed species, which may reduce defects in the films and improve device performance.

Original languageEnglish
Pages (from-to)2309-2317
Number of pages9
JournalJournal of Materials Research
Volume27
Issue number17
DOIs
Publication statusPublished - 14 Sep 2012
Externally publishedYes

Fingerprint

Zinc oxide
Tin oxides
zinc oxides
tin oxides
contamination
Contamination
Annealing
annealing
Tin
Carbonates
Rutherford backscattering spectroscopy
Thin film transistors
Threshold voltage
Surface structure
Hydroxyl Radical
threshold voltage
Spectrometry
Oxide films
oxide films
tin

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics

Cite this

Rajachidambaram, J. S., Sanghavi, S., Nachimuthu, P., Shutthanandan, V., Varga, T., Flynn, B., ... Herman, G. S. (2012). Characterization of amorphous zinc tin oxide semiconductors. Journal of Materials Research, 27(17), 2309-2317. https://doi.org/10.1557/jmr.2012.170

Characterization of amorphous zinc tin oxide semiconductors. / Rajachidambaram, Jaana S.; Sanghavi, Shail; Nachimuthu, Ponnusamy; Shutthanandan, Vaithiyalingam; Varga, Tamas; Flynn, Brendan; Thevuthasan, Suntharampillai; Herman, Gregory S.

In: Journal of Materials Research, Vol. 27, No. 17, 14.09.2012, p. 2309-2317.

Research output: Contribution to journalArticle

Rajachidambaram, JS, Sanghavi, S, Nachimuthu, P, Shutthanandan, V, Varga, T, Flynn, B, Thevuthasan, S & Herman, GS 2012, 'Characterization of amorphous zinc tin oxide semiconductors', Journal of Materials Research, vol. 27, no. 17, pp. 2309-2317. https://doi.org/10.1557/jmr.2012.170
Rajachidambaram JS, Sanghavi S, Nachimuthu P, Shutthanandan V, Varga T, Flynn B et al. Characterization of amorphous zinc tin oxide semiconductors. Journal of Materials Research. 2012 Sep 14;27(17):2309-2317. https://doi.org/10.1557/jmr.2012.170
Rajachidambaram, Jaana S. ; Sanghavi, Shail ; Nachimuthu, Ponnusamy ; Shutthanandan, Vaithiyalingam ; Varga, Tamas ; Flynn, Brendan ; Thevuthasan, Suntharampillai ; Herman, Gregory S. / Characterization of amorphous zinc tin oxide semiconductors. In: Journal of Materials Research. 2012 ; Vol. 27, No. 17. pp. 2309-2317.
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