Characterization of amorphous zinc tin oxide semiconductors

Jaana S. Rajachidambaram, Shail Sanghavi, Ponnusamy Nachimuthu, Vaithiyalingam Shutthanandan, Tamas Varga, Brendan Flynn, Suntharampillai Thevuthasan, Gregory S. Herman

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    18 Citations (Scopus)


    Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and postannealing conditions on film structure, composition, surface contamination, and thin-film transistor (TFT) performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. Rutherford backscattering spectrometry indicated that the bulk Zn:Sn ratio of the sputter-deposited films were slightly tin rich compared to the composition of the ceramic sputter target. X-ray photoelectron spectroscopy indicated that residual surface contamination depended strongly on the sample postannealing conditions where water, carbonate, and hydroxyl species were adsorbed to the surface. Electrical characterization of ZTO TFTs indicated that the best devices had mobilities of 17 cm 2/Vs, threshold voltages of-1.5 V, subthreshold slopes of 0.9 V/dec, turn-on voltages of-12 V, and on-to-off ratio of >10 7. Annealing ZTO in vacuum assisted in the removal of adsorbed species, which may reduce defects in the films and improve device performance.

    Original languageEnglish
    Pages (from-to)2309-2317
    Number of pages9
    JournalJournal of Materials Research
    Issue number17
    Publication statusPublished - 14 Sep 2012


    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Rajachidambaram, J. S., Sanghavi, S., Nachimuthu, P., Shutthanandan, V., Varga, T., Flynn, B., Thevuthasan, S., & Herman, G. S. (2012). Characterization of amorphous zinc tin oxide semiconductors. Journal of Materials Research, 27(17), 2309-2317.