Channeling study of lattice disorder and gold implants in gallium nitride

Weilin Jiang, W. J. Weber, S. Thevuthasan, V. Shutthanandan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Irradiation experiments have been performed 60° off normal for a gallium nitride (GaN) single-crystal film at 300 K using 3 MeV Au3+ ions over fluences ranging from 0.88 to 86.2 ions/nm2. The accumulation of disorder on both the Ga and N sublattices has been simultaneously investigated using 3.8 MeV He+ non-Rutherford backscattering spectrometry (non-RBS) along the 〈0001〉 and 〈101̄1〉 axial channeling directions. The accumulated disorder at the damage peak increases with dose below 10 dpa and saturates at a relative level of ∼0.7 between 10 and 60 dpa. Complete amorphization starts at the surface and grows into the damage peak regime. A higher rate of disordering on the N sublattice is observed at low damage levels, which suggests a lower threshold displacement energy on the N sublattice in GaN. Isochronal annealing (20 min) at temperatures up to 1000 K has been used to follow the thermal response of the Ga disorder and Au implants. Some defect recovery occurs at the intermediate damage levels. A fraction of Au occupancy on the Ga lattice site is observed in the as-implanted GaN, and the substitutional fraction of the implanted Au increases with increasing temperature.

Original languageEnglish
Pages (from-to)509-513
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume191
Issue number1-4
DOIs
Publication statusPublished - May 2002
Externally publishedYes

Fingerprint

Gallium nitride
gallium nitrides
Gold
disorders
gold
sublattices
damage
Ions
Amorphization
Backscattering
Spectrometry
Irradiation
Single crystals
Annealing
Recovery
backscattering
Temperature
Defects
fluence
ions

Keywords

  • Disorder accumulation and recovery
  • GaN
  • Ion channeling analysis
  • Ion irradiation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Channeling study of lattice disorder and gold implants in gallium nitride. / Jiang, Weilin; Weber, W. J.; Thevuthasan, S.; Shutthanandan, V.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 191, No. 1-4, 05.2002, p. 509-513.

Research output: Contribution to journalArticle

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