Channeling studies of CeO2 and Ce1-xZrxO2 films on yttria-stabilized ZrO2(111)

V. Shutthanandan, S. Thevuthasan, Y. J. Kim, C. H.F. Peden

    Research output: Contribution to journalConference article

    Abstract

    Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO2 and Ce0.7Zr0.3O2 films on yttria-stabilized ZrO2(111) substrates. Both films appear to have high crystalline quality with minimum yield of Ce in the CeO2 and Ce0.7Zr0.3O2 films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO2 film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce0.7Zr0.3O2 film.

    Original languageEnglish
    Pages (from-to)AA2.6.1-AA2.6.6
    JournalMaterials Research Society Symposium - Proceedings
    Volume654
    Publication statusPublished - 1 Dec 2001
    EventStructure Property Relationships of Oxide Surfaces and Interfaces - Boston, MA, United States
    Duration: 27 Nov 200029 Nov 2000

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    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Shutthanandan, V., Thevuthasan, S., Kim, Y. J., & Peden, C. H. F. (2001). Channeling studies of CeO2 and Ce1-xZrxO2 films on yttria-stabilized ZrO2(111). Materials Research Society Symposium - Proceedings, 654, AA2.6.1-AA2.6.6.