Channeling studies of CeO 2 and Ce 1-xZr xO 2 films on yttria-stabilized ZrO 2(111)

V. Shutthanandan, S. Thevuthasan, Y. J. Kim, C. H F Peden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO 2 and Ce 0.7Zr 0.3O 2 films on yttria-stabilized ZrO 2(111) substrates. Both films appear to have high crystalline quality with minimum yield of Ce in the CeO 2 and Ce 0.7Zr 0.3O 2 films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO 2 film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce 0.7Zr 0.3O 2 film.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Carter, X Pan, K Sickafus, H Tuller, T Wood
Volume654
Publication statusPublished - 2001
Externally publishedYes
EventStructure Property Relationships of Oxide Surfaces and Interfaces - Boston, MA, United States
Duration: 27 Nov 200029 Nov 2000

Other

OtherStructure Property Relationships of Oxide Surfaces and Interfaces
CountryUnited States
CityBoston, MA
Period27/11/0029/11/00

Fingerprint

Yttrium oxide
Crystalline materials
Atoms
Rutherford backscattering spectroscopy
Substrates
yttria
Visibility
Spectrometry
Ion beams
Cations
Positive ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Shutthanandan, V., Thevuthasan, S., Kim, Y. J., & Peden, C. H. F. (2001). Channeling studies of CeO 2 and Ce 1-xZr xO 2 films on yttria-stabilized ZrO 2(111) In C. Carter, X. Pan, K. Sickafus, H. Tuller, & T. Wood (Eds.), Materials Research Society Symposium - Proceedings (Vol. 654)

Channeling studies of CeO 2 and Ce 1-xZr xO 2 films on yttria-stabilized ZrO 2(111) . / Shutthanandan, V.; Thevuthasan, S.; Kim, Y. J.; Peden, C. H F.

Materials Research Society Symposium - Proceedings. ed. / C Carter; X Pan; K Sickafus; H Tuller; T Wood. Vol. 654 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shutthanandan, V, Thevuthasan, S, Kim, YJ & Peden, CHF 2001, Channeling studies of CeO 2 and Ce 1-xZr xO 2 films on yttria-stabilized ZrO 2(111) in C Carter, X Pan, K Sickafus, H Tuller & T Wood (eds), Materials Research Society Symposium - Proceedings. vol. 654, Structure Property Relationships of Oxide Surfaces and Interfaces, Boston, MA, United States, 27/11/00.
Shutthanandan V, Thevuthasan S, Kim YJ, Peden CHF. Channeling studies of CeO 2 and Ce 1-xZr xO 2 films on yttria-stabilized ZrO 2(111) In Carter C, Pan X, Sickafus K, Tuller H, Wood T, editors, Materials Research Society Symposium - Proceedings. Vol. 654. 2001
Shutthanandan, V. ; Thevuthasan, S. ; Kim, Y. J. ; Peden, C. H F. / Channeling studies of CeO 2 and Ce 1-xZr xO 2 films on yttria-stabilized ZrO 2(111) Materials Research Society Symposium - Proceedings. editor / C Carter ; X Pan ; K Sickafus ; H Tuller ; T Wood. Vol. 654 2001.
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AB - Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO 2 and Ce 0.7Zr 0.3O 2 films on yttria-stabilized ZrO 2(111) substrates. Both films appear to have high crystalline quality with minimum yield of Ce in the CeO 2 and Ce 0.7Zr 0.3O 2 films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO 2 film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce 0.7Zr 0.3O 2 film.

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