Cavity quantum electrodynamics between parallel dielectric surfaces

Hyunchul Nha, W. Jhe

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We use a quantum-mechanical linear-response formalism in the dipole approximation to calculate the decayrate change and the energy-level shift of an atom between two parallel dielectric surfaces. Our results can be applied to various problems such as two conductor plates, one conductor and one dielectric, and two different dielectrics. In particular, we calculate the decay rate and the level shift in the case of two identical dielectric plates. The dependences of the transition rate on the atomic position in the gap and on the dielectric constant of the surfaces are investigated in detail. In the case of the level shift, we are able to obtain analytic expressions for two limiting cases (the short-range instantaneous van der Waals interaction energy and the long-range Casimir-Polder retarded interaction energy).

Original languageEnglish
Pages (from-to)3505-3513
Number of pages9
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume54
Issue number4
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

quantum electrodynamics
cavities
shift
conductors
decay rates
energy levels
interactions
permittivity
dipoles
formalism
energy
approximation
atoms

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Cavity quantum electrodynamics between parallel dielectric surfaces. / Nha, Hyunchul; Jhe, W.

In: Physical Review A - Atomic, Molecular, and Optical Physics, Vol. 54, No. 4, 1996, p. 3505-3513.

Research output: Contribution to journalArticle

@article{060c18eb520a452d8fa8642c871cb8df,
title = "Cavity quantum electrodynamics between parallel dielectric surfaces",
abstract = "We use a quantum-mechanical linear-response formalism in the dipole approximation to calculate the decayrate change and the energy-level shift of an atom between two parallel dielectric surfaces. Our results can be applied to various problems such as two conductor plates, one conductor and one dielectric, and two different dielectrics. In particular, we calculate the decay rate and the level shift in the case of two identical dielectric plates. The dependences of the transition rate on the atomic position in the gap and on the dielectric constant of the surfaces are investigated in detail. In the case of the level shift, we are able to obtain analytic expressions for two limiting cases (the short-range instantaneous van der Waals interaction energy and the long-range Casimir-Polder retarded interaction energy).",
author = "Hyunchul Nha and W. Jhe",
year = "1996",
language = "English",
volume = "54",
pages = "3505--3513",
journal = "Physical Review A - Atomic, Molecular, and Optical Physics",
issn = "1050-2947",
publisher = "American Physical Society",
number = "4",

}

TY - JOUR

T1 - Cavity quantum electrodynamics between parallel dielectric surfaces

AU - Nha, Hyunchul

AU - Jhe, W.

PY - 1996

Y1 - 1996

N2 - We use a quantum-mechanical linear-response formalism in the dipole approximation to calculate the decayrate change and the energy-level shift of an atom between two parallel dielectric surfaces. Our results can be applied to various problems such as two conductor plates, one conductor and one dielectric, and two different dielectrics. In particular, we calculate the decay rate and the level shift in the case of two identical dielectric plates. The dependences of the transition rate on the atomic position in the gap and on the dielectric constant of the surfaces are investigated in detail. In the case of the level shift, we are able to obtain analytic expressions for two limiting cases (the short-range instantaneous van der Waals interaction energy and the long-range Casimir-Polder retarded interaction energy).

AB - We use a quantum-mechanical linear-response formalism in the dipole approximation to calculate the decayrate change and the energy-level shift of an atom between two parallel dielectric surfaces. Our results can be applied to various problems such as two conductor plates, one conductor and one dielectric, and two different dielectrics. In particular, we calculate the decay rate and the level shift in the case of two identical dielectric plates. The dependences of the transition rate on the atomic position in the gap and on the dielectric constant of the surfaces are investigated in detail. In the case of the level shift, we are able to obtain analytic expressions for two limiting cases (the short-range instantaneous van der Waals interaction energy and the long-range Casimir-Polder retarded interaction energy).

UR - http://www.scopus.com/inward/record.url?scp=0030262313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030262313&partnerID=8YFLogxK

M3 - Article

VL - 54

SP - 3505

EP - 3513

JO - Physical Review A - Atomic, Molecular, and Optical Physics

JF - Physical Review A - Atomic, Molecular, and Optical Physics

SN - 1050-2947

IS - 4

ER -