Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley-Read-Hall recombination

Y. Beggah, D. E. Mekki, Nouar Tabet, R. J. Tarento

Research output: Contribution to journalArticle

1 Citation (Scopus)


The present article deals with electron beam induced current (EBIC) calculation. Some published experimental data suggest that part of the current loss could be related to recombination within the depletion region and at the metal-semiconductor interface of a Schottky contact. Calculations have been carried out within the Shockley-Read-Hall (SRH) framework. The results show that the current loss due to possible recombination at the metal-semiconductor interface remains too low, even for high values of the recombination velocity.

Original languageEnglish
Pages (from-to)379-383
Number of pages5
JournalSolid-State Electronics
Issue number3
Publication statusPublished - 30 Mar 1998
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this