Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley-Read-Hall recombination

Y. Beggah, D. E. Mekki, Nouar Tabet, R. J. Tarento

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The present article deals with electron beam induced current (EBIC) calculation. Some published experimental data suggest that part of the current loss could be related to recombination within the depletion region and at the metal-semiconductor interface of a Schottky contact. Calculations have been carried out within the Shockley-Read-Hall (SRH) framework. The results show that the current loss due to possible recombination at the metal-semiconductor interface remains too low, even for high values of the recombination velocity.

Original languageEnglish
Pages (from-to)379-383
Number of pages5
JournalSolid-State Electronics
Volume42
Issue number3
Publication statusPublished - 30 Mar 1998
Externally publishedYes

Fingerprint

Induced currents
electric contacts
Electron beams
Metals
electron beams
Semiconductor materials
metals
depletion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley-Read-Hall recombination. / Beggah, Y.; Mekki, D. E.; Tabet, Nouar; Tarento, R. J.

In: Solid-State Electronics, Vol. 42, No. 3, 30.03.1998, p. 379-383.

Research output: Contribution to journalArticle

@article{caabd638a061465589427be01c9340bb,
title = "Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley-Read-Hall recombination",
abstract = "The present article deals with electron beam induced current (EBIC) calculation. Some published experimental data suggest that part of the current loss could be related to recombination within the depletion region and at the metal-semiconductor interface of a Schottky contact. Calculations have been carried out within the Shockley-Read-Hall (SRH) framework. The results show that the current loss due to possible recombination at the metal-semiconductor interface remains too low, even for high values of the recombination velocity.",
author = "Y. Beggah and Mekki, {D. E.} and Nouar Tabet and Tarento, {R. J.}",
year = "1998",
month = "3",
day = "30",
language = "English",
volume = "42",
pages = "379--383",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley-Read-Hall recombination

AU - Beggah, Y.

AU - Mekki, D. E.

AU - Tabet, Nouar

AU - Tarento, R. J.

PY - 1998/3/30

Y1 - 1998/3/30

N2 - The present article deals with electron beam induced current (EBIC) calculation. Some published experimental data suggest that part of the current loss could be related to recombination within the depletion region and at the metal-semiconductor interface of a Schottky contact. Calculations have been carried out within the Shockley-Read-Hall (SRH) framework. The results show that the current loss due to possible recombination at the metal-semiconductor interface remains too low, even for high values of the recombination velocity.

AB - The present article deals with electron beam induced current (EBIC) calculation. Some published experimental data suggest that part of the current loss could be related to recombination within the depletion region and at the metal-semiconductor interface of a Schottky contact. Calculations have been carried out within the Shockley-Read-Hall (SRH) framework. The results show that the current loss due to possible recombination at the metal-semiconductor interface remains too low, even for high values of the recombination velocity.

UR - http://www.scopus.com/inward/record.url?scp=0032017744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032017744&partnerID=8YFLogxK

M3 - Article

VL - 42

SP - 379

EP - 383

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -