The present article deals with electron beam induced current (EBIC) calculation. Some published experimental data suggest that part of the current loss could be related to recombination within the depletion region and at the metal-semiconductor interface of a Schottky contact. Calculations have been carried out within the Shockley-Read-Hall (SRH) framework. The results show that the current loss due to possible recombination at the metal-semiconductor interface remains too low, even for high values of the recombination velocity.
|Number of pages||5|
|Publication status||Published - 30 Mar 1998|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics