BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS

Bo Wang, Man Kay Law, Amine Bermak, Fang Tang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This letter presents a compensation topology which minimizes the inter-/intra-die spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) of a bipolar junction transistor (BJT). Without using special devices, the base recombination current from a deep-saturated BJT is utilized in this scheme. Before compensation, the Vbe standard deviation (STD) of 15 standalone BJTs measures 3.24 mV at 25 °C with constant external bias currents. After compensation, Vbe STD of 30 dies from two batches reduces to 1.8 mV with on-chip bias current. The PTAT drift of Vbe as that in typical BJT-based designs are also alleviated.

Original languageEnglish
Article number7254132
Pages (from-to)1111-1113
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number11
DOIs
Publication statusPublished - 1 Nov 2015
Externally publishedYes

Fingerprint

Bipolar transistors
Bias currents
Topology
Temperature
Electric potential
Compensation and Redress

Keywords

  • Bipolar junction transistor (BJT) process spread
  • Spread compensation
  • trimless CMOS voltage reference

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS. / Wang, Bo; Law, Man Kay; Bermak, Amine; Tang, Fang.

In: IEEE Electron Device Letters, Vol. 36, No. 11, 7254132, 01.11.2015, p. 1111-1113.

Research output: Contribution to journalArticle

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