Bis(bis(trimethylsilyl)methyl)tin(IV) Chalcogenides as Possible Precursors for the Metal Organic Chemical Vapor Deposition of Tin(II) Selenide and Tin(II) Telluride Films

Ilya S. Chuprakov, Klaus Hermann Dahmen, Jörg J. Schneider, Jörg Hagen

Research output: Contribution to journalArticle

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Abstract

Two air- and light-stable compounds, bis(bis(trimethylsilyl)methyl)tin(IV) selenide and telluride, [Sn{(SiMe3)2CH}2(μ-E)]2 (E = Se (1) and Te (2)), were investigated as possible precursors for metal organic chemical vapor deposition (MOCVD). Their sublimation rate was measured by thermal gravimetric analysis in the 190-260°C range and was found to be as high as 2 mg/min at 260°C at 14 mbar. MOCVD experiments were conducted using both compounds as precursors at 300-600°C and 1 Torr under a flow of a 1:1 He/H2 mixture. Strong selectivity of the decomposition reaction was found toward the metallic surfaces (copper, silver, gold) with respect to nonmetallic surfaces (quartz, silicon with natural oxide layer). A thin layer (≈10 nm) of conducting seeding layer was used for the deposition of carbon-free film of SnTe, using 2 as a precursor. The films were examined by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy analyses.

Original languageEnglish
Pages (from-to)3467-3470
Number of pages4
JournalChemistry of Materials
Volume10
Issue number11
Publication statusPublished - 1 Nov 1998
Externally publishedYes

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Organic Chemicals
Chalcogenides
Tin
Organic chemicals
Chemical vapor deposition
Metals
Quartz
Gravimetric analysis
Sublimation
Silicon
Silver
Gold
Oxides
Copper
Carbon
X ray photoelectron spectroscopy
Decomposition
X ray diffraction
Scanning electron microscopy
Air

ASJC Scopus subject areas

  • Materials Science(all)
  • Materials Chemistry

Cite this

Bis(bis(trimethylsilyl)methyl)tin(IV) Chalcogenides as Possible Precursors for the Metal Organic Chemical Vapor Deposition of Tin(II) Selenide and Tin(II) Telluride Films. / Chuprakov, Ilya S.; Dahmen, Klaus Hermann; Schneider, Jörg J.; Hagen, Jörg.

In: Chemistry of Materials, Vol. 10, No. 11, 01.11.1998, p. 3467-3470.

Research output: Contribution to journalArticle

Chuprakov, Ilya S. ; Dahmen, Klaus Hermann ; Schneider, Jörg J. ; Hagen, Jörg. / Bis(bis(trimethylsilyl)methyl)tin(IV) Chalcogenides as Possible Precursors for the Metal Organic Chemical Vapor Deposition of Tin(II) Selenide and Tin(II) Telluride Films. In: Chemistry of Materials. 1998 ; Vol. 10, No. 11. pp. 3467-3470.
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