Band structure interpretation of the optical transitions between low-lying conduction bands in n-type doped SiC polytypes

W. R L Lambrecht, S. Limpijumnong, Sergey Rashkeev, B. Segall

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Abstract

The optical absorption spectra corresponding to transitions between the first few conduction bands, which have been observed in various fairly heavily n-type doped polytypes of SiC, are calculated from first-principles. In 6H-SiC, these spectra provide evidence for the existence of a saddle-point structure in the lowest conduction band at the M point. Good agreement is obtained for the peak positions and the polarization dependence of the spectra. Discrepancies in peak intensities and widths are discussed.

Original languageEnglish
Pages (from-to)271-274
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 1
Publication statusPublished - 1 Dec 1998
Externally publishedYes

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Keywords

  • Band Structure
  • Optical Absorption

ASJC Scopus subject areas

  • Materials Science(all)

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