Band offsets measured by internal photoemission-induced second-harmonic generation

Z. Marka, R. Pasternak, Sergey Rashkeev, Y. Jiang, S. T. Pantelides, N. H. Tolk, P. K. Roy, J. Kozub

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We report first band-offset measurements obtained by multiphoton internal-photoemission induced secondharmonic generation. Our two-color contactless laser technique involves (1) optically pumping electrons into the oxide and (2) probing the resulting interface electric field using time-dependent second-harmonic generation. One- and two-photon internal-photoemission thresholds for the Si/SiO2 interface were measured to be 4.5 and 2.25 eV, respectively. This method promises to become a valuable experimental tool in determining band offsets in wide variety of semiconductor interfaces.

Original languageEnglish
Article number045302
Pages (from-to)453021-453025
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number4
Publication statusPublished - 15 Jan 2003
Externally publishedYes

Fingerprint

Photoemission
Harmonic generation
harmonic generations
photoelectric emission
Photons
Pumping (laser)
electron pumping
Oxides
Electric fields
photons
Semiconductor materials
Color
Electrons
Lasers
color
thresholds
oxides
electric fields
lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Marka, Z., Pasternak, R., Rashkeev, S., Jiang, Y., Pantelides, S. T., Tolk, N. H., ... Kozub, J. (2003). Band offsets measured by internal photoemission-induced second-harmonic generation. Physical Review B - Condensed Matter and Materials Physics, 67(4), 453021-453025. [045302].

Band offsets measured by internal photoemission-induced second-harmonic generation. / Marka, Z.; Pasternak, R.; Rashkeev, Sergey; Jiang, Y.; Pantelides, S. T.; Tolk, N. H.; Roy, P. K.; Kozub, J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 67, No. 4, 045302, 15.01.2003, p. 453021-453025.

Research output: Contribution to journalArticle

Marka, Z, Pasternak, R, Rashkeev, S, Jiang, Y, Pantelides, ST, Tolk, NH, Roy, PK & Kozub, J 2003, 'Band offsets measured by internal photoemission-induced second-harmonic generation', Physical Review B - Condensed Matter and Materials Physics, vol. 67, no. 4, 045302, pp. 453021-453025.
Marka Z, Pasternak R, Rashkeev S, Jiang Y, Pantelides ST, Tolk NH et al. Band offsets measured by internal photoemission-induced second-harmonic generation. Physical Review B - Condensed Matter and Materials Physics. 2003 Jan 15;67(4):453021-453025. 045302.
Marka, Z. ; Pasternak, R. ; Rashkeev, Sergey ; Jiang, Y. ; Pantelides, S. T. ; Tolk, N. H. ; Roy, P. K. ; Kozub, J. / Band offsets measured by internal photoemission-induced second-harmonic generation. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 67, No. 4. pp. 453021-453025.
@article{fa8d62e5f0c940c39250eb26dcd22429,
title = "Band offsets measured by internal photoemission-induced second-harmonic generation",
abstract = "We report first band-offset measurements obtained by multiphoton internal-photoemission induced secondharmonic generation. Our two-color contactless laser technique involves (1) optically pumping electrons into the oxide and (2) probing the resulting interface electric field using time-dependent second-harmonic generation. One- and two-photon internal-photoemission thresholds for the Si/SiO2 interface were measured to be 4.5 and 2.25 eV, respectively. This method promises to become a valuable experimental tool in determining band offsets in wide variety of semiconductor interfaces.",
author = "Z. Marka and R. Pasternak and Sergey Rashkeev and Y. Jiang and Pantelides, {S. T.} and Tolk, {N. H.} and Roy, {P. K.} and J. Kozub",
year = "2003",
month = "1",
day = "15",
language = "English",
volume = "67",
pages = "453021--453025",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Band offsets measured by internal photoemission-induced second-harmonic generation

AU - Marka, Z.

AU - Pasternak, R.

AU - Rashkeev, Sergey

AU - Jiang, Y.

AU - Pantelides, S. T.

AU - Tolk, N. H.

AU - Roy, P. K.

AU - Kozub, J.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - We report first band-offset measurements obtained by multiphoton internal-photoemission induced secondharmonic generation. Our two-color contactless laser technique involves (1) optically pumping electrons into the oxide and (2) probing the resulting interface electric field using time-dependent second-harmonic generation. One- and two-photon internal-photoemission thresholds for the Si/SiO2 interface were measured to be 4.5 and 2.25 eV, respectively. This method promises to become a valuable experimental tool in determining band offsets in wide variety of semiconductor interfaces.

AB - We report first band-offset measurements obtained by multiphoton internal-photoemission induced secondharmonic generation. Our two-color contactless laser technique involves (1) optically pumping electrons into the oxide and (2) probing the resulting interface electric field using time-dependent second-harmonic generation. One- and two-photon internal-photoemission thresholds for the Si/SiO2 interface were measured to be 4.5 and 2.25 eV, respectively. This method promises to become a valuable experimental tool in determining band offsets in wide variety of semiconductor interfaces.

UR - http://www.scopus.com/inward/record.url?scp=0037438547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037438547&partnerID=8YFLogxK

M3 - Article

VL - 67

SP - 453021

EP - 453025

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 4

M1 - 045302

ER -