Band-gap engineering of SnO2

O. Mounkachi, E. Salmani, M. Lakhal, H. Ez-Zahraouy, M. Hamedoun, M. Benaissa, A. Kara, A. Ennaoui, A. Benyoussef

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Abstract

Using first principles calculations based on density functional theory (DFT), the electronic properties of SnO2 bulk and thin films are studied. The electronic band structures and total energy over a range of SnO2-multilayer have been studied using DFT within the local density approximation (LDA). We show that changing the interatomic distances and relative positions of atoms could modify the band-gap energy of SnO2 semiconductors. Electronic-structure calculations show that band-gap engineering is a powerful technique for the design of new promising candidates with a direct band-gap. Our results present an important advancement toward controlling the band structure and optoelectronic properties of few-layer SnO2 via strain engineering, with important implications for practical device applications.

Original languageEnglish
Pages (from-to)34-38
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume148
DOIs
Publication statusPublished - 1 Apr 2016

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Keywords

  • Band-gap engineering
  • DFT
  • Multilayer
  • Semiconductors
  • SnO

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Mounkachi, O., Salmani, E., Lakhal, M., Ez-Zahraouy, H., Hamedoun, M., Benaissa, M., Kara, A., Ennaoui, A., & Benyoussef, A. (2016). Band-gap engineering of SnO2 Solar Energy Materials and Solar Cells, 148, 34-38. https://doi.org/10.1016/j.solmat.2015.09.062