Band-gap engineering of SnO2

O. Mounkachi, E. Salmani, M. Lakhal, H. Ez-Zahraouy, M. Hamedoun, M. Benaissa, A. Kara, A. Ennaoui, A. Benyoussef

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Using first principles calculations based on density functional theory (DFT), the electronic properties of SnO2 bulk and thin films are studied. The electronic band structures and total energy over a range of SnO2-multilayer have been studied using DFT within the local density approximation (LDA). We show that changing the interatomic distances and relative positions of atoms could modify the band-gap energy of SnO2 semiconductors. Electronic-structure calculations show that band-gap engineering is a powerful technique for the design of new promising candidates with a direct band-gap. Our results present an important advancement toward controlling the band structure and optoelectronic properties of few-layer SnO2 via strain engineering, with important implications for practical device applications.

Original languageEnglish
Pages (from-to)34-38
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume148
DOIs
Publication statusPublished - 1 Apr 2016

Fingerprint

Energy gap
Band structure
Density functional theory
Local density approximation
Electronic properties
Optoelectronic devices
Electronic structure
Multilayers
Semiconductor materials
Thin films
Atoms

Keywords

  • Band-gap engineering
  • DFT
  • Multilayer
  • Semiconductors
  • SnO

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Mounkachi, O., Salmani, E., Lakhal, M., Ez-Zahraouy, H., Hamedoun, M., Benaissa, M., ... Benyoussef, A. (2016). Band-gap engineering of SnO2 Solar Energy Materials and Solar Cells, 148, 34-38. https://doi.org/10.1016/j.solmat.2015.09.062

Band-gap engineering of SnO2 . / Mounkachi, O.; Salmani, E.; Lakhal, M.; Ez-Zahraouy, H.; Hamedoun, M.; Benaissa, M.; Kara, A.; Ennaoui, A.; Benyoussef, A.

In: Solar Energy Materials and Solar Cells, Vol. 148, 01.04.2016, p. 34-38.

Research output: Contribution to journalArticle

Mounkachi, O, Salmani, E, Lakhal, M, Ez-Zahraouy, H, Hamedoun, M, Benaissa, M, Kara, A, Ennaoui, A & Benyoussef, A 2016, 'Band-gap engineering of SnO2 ', Solar Energy Materials and Solar Cells, vol. 148, pp. 34-38. https://doi.org/10.1016/j.solmat.2015.09.062
Mounkachi O, Salmani E, Lakhal M, Ez-Zahraouy H, Hamedoun M, Benaissa M et al. Band-gap engineering of SnO2 Solar Energy Materials and Solar Cells. 2016 Apr 1;148:34-38. https://doi.org/10.1016/j.solmat.2015.09.062
Mounkachi, O. ; Salmani, E. ; Lakhal, M. ; Ez-Zahraouy, H. ; Hamedoun, M. ; Benaissa, M. ; Kara, A. ; Ennaoui, A. ; Benyoussef, A. / Band-gap engineering of SnO2 In: Solar Energy Materials and Solar Cells. 2016 ; Vol. 148. pp. 34-38.
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