Atomic and electronic structure investigations of HfO 2/SiO 2/Si gate stacks using aberration-corrected STEM

K. Van Benthem, Sergey Rashkeev, S. J. Pennycook

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Aberration correction in scanning transmission electron microscopy represents a major breakthrough in transmission electron microscopy, enabling the formation of sub-Angstrom probe sizes. Thus, electron microscopy achieved single atom sensitivity. Here, we show how this technique with its unique spatial resolution in combination with high-resolution electron energy-loss spectroscopy can be used to investigate atomic and electronic structures of semiconductor interfaces with single atom sensitivity. We employ a Si/HfO 2/SiO 2/Si high-k dielectric interface to show the presence of single Hf atoms in the SiO 2 interlayer. Furthermore, we demonstrate how local dielectric properties and local band structure information can be obtained by electron energy-loss spectroscopy.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages79-84
Number of pages6
Volume788
DOIs
Publication statusPublished - 9 Sep 2005
Externally publishedYes
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: 15 Mar 200518 Mar 2005

Other

Other2005 International Conference on Characterization and Metrology for ULSI Technology
CountryUnited States
CityRichardson, TX
Period15/3/0518/3/05

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Keywords

  • Aberration correction
  • Dielectric properties
  • Interfaces
  • Single atom
  • STEM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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