Abstract
Aberration correction in scanning transmission electron microscopy represents a major breakthrough in transmission electron microscopy, enabling the formation of sub-Angstrom probe sizes. Thus, electron microscopy achieved single atom sensitivity. Here, we show how this technique with its unique spatial resolution in combination with high-resolution electron energy-loss spectroscopy can be used to investigate atomic and electronic structures of semiconductor interfaces with single atom sensitivity. We employ a Si/HfO 2/SiO 2/Si high-k dielectric interface to show the presence of single Hf atoms in the SiO 2 interlayer. Furthermore, we demonstrate how local dielectric properties and local band structure information can be obtained by electron energy-loss spectroscopy.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 79-84 |
| Number of pages | 6 |
| Volume | 788 |
| DOIs | |
| Publication status | Published - 9 Sep 2005 |
| Externally published | Yes |
| Event | 2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States Duration: 15 Mar 2005 → 18 Mar 2005 |
Other
| Other | 2005 International Conference on Characterization and Metrology for ULSI Technology |
|---|---|
| Country | United States |
| City | Richardson, TX |
| Period | 15/3/05 → 18/3/05 |
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Keywords
- Aberration correction
- Dielectric properties
- Interfaces
- Single atom
- STEM
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Atomic and electronic structure investigations of HfO 2/SiO 2/Si gate stacks using aberration-corrected STEM. / Van Benthem, K.; Rashkeev, Sergey; Pennycook, S. J.
AIP Conference Proceedings. Vol. 788 2005. p. 79-84.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Atomic and electronic structure investigations of HfO 2/SiO 2/Si gate stacks using aberration-corrected STEM
AU - Van Benthem, K.
AU - Rashkeev, Sergey
AU - Pennycook, S. J.
PY - 2005/9/9
Y1 - 2005/9/9
N2 - Aberration correction in scanning transmission electron microscopy represents a major breakthrough in transmission electron microscopy, enabling the formation of sub-Angstrom probe sizes. Thus, electron microscopy achieved single atom sensitivity. Here, we show how this technique with its unique spatial resolution in combination with high-resolution electron energy-loss spectroscopy can be used to investigate atomic and electronic structures of semiconductor interfaces with single atom sensitivity. We employ a Si/HfO 2/SiO 2/Si high-k dielectric interface to show the presence of single Hf atoms in the SiO 2 interlayer. Furthermore, we demonstrate how local dielectric properties and local band structure information can be obtained by electron energy-loss spectroscopy.
AB - Aberration correction in scanning transmission electron microscopy represents a major breakthrough in transmission electron microscopy, enabling the formation of sub-Angstrom probe sizes. Thus, electron microscopy achieved single atom sensitivity. Here, we show how this technique with its unique spatial resolution in combination with high-resolution electron energy-loss spectroscopy can be used to investigate atomic and electronic structures of semiconductor interfaces with single atom sensitivity. We employ a Si/HfO 2/SiO 2/Si high-k dielectric interface to show the presence of single Hf atoms in the SiO 2 interlayer. Furthermore, we demonstrate how local dielectric properties and local band structure information can be obtained by electron energy-loss spectroscopy.
KW - Aberration correction
KW - Dielectric properties
KW - Interfaces
KW - Single atom
KW - STEM
UR - http://www.scopus.com/inward/record.url?scp=33749667933&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749667933&partnerID=8YFLogxK
U2 - 10.1063/1.2062942
DO - 10.1063/1.2062942
M3 - Conference contribution
SN - 0735402779
SN - 9780735402775
VL - 788
SP - 79
EP - 84
BT - AIP Conference Proceedings
ER -