Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials

High Sputter Rate and Accurate Interfacial Information

Zhaoying Wang, Bingwen Liu, Evan W. Zhao, Ke Jin, Yingge Du, James J. Neeway, Joseph V. Ryan, Dehong Hu, Kelvin H L Zhang, Mina Hong, Solenne Le Guernic, Suntharampilai Thevuthasan, Fuyi Wang, Zihua Zhu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)1283-1290
Number of pages8
JournalJournal of the American Society for Mass Spectrometry
Volume26
Issue number8
DOIs
Publication statusPublished - 21 Aug 2015
Externally publishedYes

Fingerprint

Depth profiling
Insulating materials
Argon
Secondary ion mass spectrometry
Sputtering
Cesium
Oxides
Glass
Ions
Oxygen
Radioactive Waste
Corrosion
Oxide films
Thin films
perovskite

Keywords

  • Argon cluster
  • Charging alleviation
  • Perovskite oxide thin films
  • SON68 glass
  • Sputtering rate
  • ToF-SIMS

ASJC Scopus subject areas

  • Structural Biology
  • Spectroscopy

Cite this

Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials : High Sputter Rate and Accurate Interfacial Information. / Wang, Zhaoying; Liu, Bingwen; Zhao, Evan W.; Jin, Ke; Du, Yingge; Neeway, James J.; Ryan, Joseph V.; Hu, Dehong; Zhang, Kelvin H L; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampilai; Wang, Fuyi; Zhu, Zihua.

In: Journal of the American Society for Mass Spectrometry, Vol. 26, No. 8, 21.08.2015, p. 1283-1290.

Research output: Contribution to journalArticle

Wang, Z, Liu, B, Zhao, EW, Jin, K, Du, Y, Neeway, JJ, Ryan, JV, Hu, D, Zhang, KHL, Hong, M, Le Guernic, S, Thevuthasan, S, Wang, F & Zhu, Z 2015, 'Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information', Journal of the American Society for Mass Spectrometry, vol. 26, no. 8, pp. 1283-1290. https://doi.org/10.1007/s13361-015-1159-1
Wang, Zhaoying ; Liu, Bingwen ; Zhao, Evan W. ; Jin, Ke ; Du, Yingge ; Neeway, James J. ; Ryan, Joseph V. ; Hu, Dehong ; Zhang, Kelvin H L ; Hong, Mina ; Le Guernic, Solenne ; Thevuthasan, Suntharampilai ; Wang, Fuyi ; Zhu, Zihua. / Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials : High Sputter Rate and Accurate Interfacial Information. In: Journal of the American Society for Mass Spectrometry. 2015 ; Vol. 26, No. 8. pp. 1283-1290.
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