Annealing behavior of Al-implantation-induced disorder in 4H-SiC

Y. Zhang, W. J. Weber, W. Jiang, V. Shutthanandan, S. Thevuthasan, M. Janson, A. Hallén

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4 Citations (Scopus)


Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al 22+ and subsequently annealed at elevated temperatures. In addition to the damage peak, an enhancement of the backscattering yield between the surface peak and damage peak is observed. Rutherford backscattering spectrometry results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases, and the near-surface peak disappears after annealing at 570 K. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that implanted Al stabilizes or inhibits recovery Si disorder under the current experimental conditions.

Original languageEnglish
Pages (from-to)647-651
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - Jun 2004
Externally publishedYes



  • Annealing
  • Defect
  • Ion implantation
  • Rutherford backscattering spectrometry
  • Secondary ion mass spectroscopy
  • SiC

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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