Analysis of Si-F bonds on Si(111) surface by electrochemical method

F. Bensliman, M. Aggour, A. Ennaoui, Y. Hirota, M. Matsumura

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Electrochemical current at Si(111) has been investigated in dilute HF solution as a function of surface pretreatment which controls the amount of Si-F bonds on the surface. When the partly F-covered surface is immersed in dilute HF solution, anodic current transient flows as the surface Si atoms bonded to F atoms dissolve into the solution and the surface is hydrogen terminated. The anodic current becomes very small if the F-covered surface is treated with oxygen-free water, which is effective for removing Si-F from the surface and for making a completely hydrogen-terminated Si(111) surface. All results suggest that the anodic current can be a good measure for the evaluation of a small amount of Si-F bonds on Si surfaces.

Original languageEnglish
Pages (from-to)566-568
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number12
Publication statusPublished - Dec 2000


ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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