Analysis of Si-F bonds on Si(111) surface by electrochemical method

F. Bensliman, M. Aggour, A. Ennaoui, Y. Hirota, M. Matsumura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electrochemical current at Si(111) has been investigated in dilute HF solution as a function of surface pretreatment which controls the amount of Si-F bonds on the surface. When the partly F-covered surface is immersed in dilute HF solution, anodic current transient flows as the surface Si atoms bonded to F atoms dissolve into the solution and the surface is hydrogen terminated. The anodic current becomes very small if the F-covered surface is treated with oxygen-free water, which is effective for removing Si-F from the surface and for making a completely hydrogen-terminated Si(111) surface. All results suggest that the anodic current can be a good measure for the evaluation of a small amount of Si-F bonds on Si surfaces.

Original languageEnglish
Pages (from-to)566-568
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume3
Issue number12
DOIs
Publication statusPublished - Dec 2000
Externally publishedYes

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Hydrogen
Atoms
hydrogen
pretreatment
atoms
Oxygen
Water
evaluation
oxygen
water

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Analysis of Si-F bonds on Si(111) surface by electrochemical method. / Bensliman, F.; Aggour, M.; Ennaoui, A.; Hirota, Y.; Matsumura, M.

In: Electrochemical and Solid-State Letters, Vol. 3, No. 12, 12.2000, p. 566-568.

Research output: Contribution to journalArticle

Bensliman, F. ; Aggour, M. ; Ennaoui, A. ; Hirota, Y. ; Matsumura, M. / Analysis of Si-F bonds on Si(111) surface by electrochemical method. In: Electrochemical and Solid-State Letters. 2000 ; Vol. 3, No. 12. pp. 566-568.
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