An in-plane GaAs single-electron memory cell operating at 77 K

K. H. Yoo, J. W. Park, Kim Jinhee, K. S. Park, Sangchul Oh, J. O. Lee, J. J. Kim, J. B. Choi, J. J. Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

Original languageEnglish
Pages (from-to)2073-2075
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number14
Publication statusPublished - 5 Apr 1999
Externally publishedYes

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floating
cells
electrometers
electrons
electric potential
threshold voltage
charging
shift
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Yoo, K. H., Park, J. W., Jinhee, K., Park, K. S., Oh, S., Lee, J. O., ... Lee, J. J. (1999). An in-plane GaAs single-electron memory cell operating at 77 K. Applied Physics Letters, 74(14), 2073-2075.

An in-plane GaAs single-electron memory cell operating at 77 K. / Yoo, K. H.; Park, J. W.; Jinhee, Kim; Park, K. S.; Oh, Sangchul; Lee, J. O.; Kim, J. J.; Choi, J. B.; Lee, J. J.

In: Applied Physics Letters, Vol. 74, No. 14, 05.04.1999, p. 2073-2075.

Research output: Contribution to journalArticle

Yoo, KH, Park, JW, Jinhee, K, Park, KS, Oh, S, Lee, JO, Kim, JJ, Choi, JB & Lee, JJ 1999, 'An in-plane GaAs single-electron memory cell operating at 77 K', Applied Physics Letters, vol. 74, no. 14, pp. 2073-2075.
Yoo KH, Park JW, Jinhee K, Park KS, Oh S, Lee JO et al. An in-plane GaAs single-electron memory cell operating at 77 K. Applied Physics Letters. 1999 Apr 5;74(14):2073-2075.
Yoo, K. H. ; Park, J. W. ; Jinhee, Kim ; Park, K. S. ; Oh, Sangchul ; Lee, J. O. ; Kim, J. J. ; Choi, J. B. ; Lee, J. J. / An in-plane GaAs single-electron memory cell operating at 77 K. In: Applied Physics Letters. 1999 ; Vol. 74, No. 14. pp. 2073-2075.
@article{abe33b2bcb864b38bbcd7035ea4210a9,
title = "An in-plane GaAs single-electron memory cell operating at 77 K",
abstract = "An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.",
author = "Yoo, {K. H.} and Park, {J. W.} and Kim Jinhee and Park, {K. S.} and Sangchul Oh and Lee, {J. O.} and Kim, {J. J.} and Choi, {J. B.} and Lee, {J. J.}",
year = "1999",
month = "4",
day = "5",
language = "English",
volume = "74",
pages = "2073--2075",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - An in-plane GaAs single-electron memory cell operating at 77 K

AU - Yoo, K. H.

AU - Park, J. W.

AU - Jinhee, Kim

AU - Park, K. S.

AU - Oh, Sangchul

AU - Lee, J. O.

AU - Kim, J. J.

AU - Choi, J. B.

AU - Lee, J. J.

PY - 1999/4/5

Y1 - 1999/4/5

N2 - An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

AB - An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

UR - http://www.scopus.com/inward/record.url?scp=0032621371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032621371&partnerID=8YFLogxK

M3 - Article

VL - 74

SP - 2073

EP - 2075

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -