An improvement of surface smoothness and lattice match of CeO2 buffer layers on R-sapphire processed by MOCVD

I. E. Graboy, N. V. Markov, V. V. Maleev, A. R. Kaul, S. N. Polyakov, V. L. Svetchnikov, H. W. Zandbergen, K. H. Dahmen

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Abstract

Epitaxial thin films of CeO2 and Ce1-xRxO2-y (R=Y, Nd; x=0-0.32) on R-sapphire were prepared by band flash evaporation MOCVD, It was demonstrated that the smoothness of the films can be improved by a decrease of deposition rate and by post deposition annealing at 1000 °C, The lattice match of buffer layers with R-A12O3 and YBa2Cu3O7-δ was improved by doping of ceria with yttrium and neodymium correspondingly, A bilayer structure Ce0.7Nd0.3O2-y/Ce0.68Y 0.32O2-y/R-AI2O3 is proposed as potential substrate material for YBa2Cu3O7-δ deposition.

Original languageEnglish
Pages (from-to)318-321
Number of pages4
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
Publication statusPublished - 1 Apr 1997
Externally publishedYes

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Keywords

  • Deposition rate decrease
  • MOCVD
  • Post deposition annealing

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Graboy, I. E., Markov, N. V., Maleev, V. V., Kaul, A. R., Polyakov, S. N., Svetchnikov, V. L., Zandbergen, H. W., & Dahmen, K. H. (1997). An improvement of surface smoothness and lattice match of CeO2 buffer layers on R-sapphire processed by MOCVD. Journal of Alloys and Compounds, 251(1-2), 318-321.