Epitaxial thin films of CeO2 and Ce1-xRxO2-y (R=Y, Nd; x=0-0.32) on R-sapphire were prepared by band flash evaporation MOCVD, It was demonstrated that the smoothness of the films can be improved by a decrease of deposition rate and by post deposition annealing at 1000 °C, The lattice match of buffer layers with R-A12O3 and YBa2Cu3O7-δ was improved by doping of ceria with yttrium and neodymium correspondingly, A bilayer structure Ce0.7Nd0.3O2-y/Ce0.68Y 0.32O2-y/R-AI2O3 is proposed as potential substrate material for YBa2Cu3O7-δ deposition.
|Number of pages||4|
|Journal||Journal of Alloys and Compounds|
|Publication status||Published - 1 Apr 1997|
- Deposition rate decrease
- Post deposition annealing
ASJC Scopus subject areas
- Metals and Alloys