Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

B. Aïssa, M. Nedil, A. H. Esam, N. Tabet, D. Therriault, F. Rosei

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Abstract

We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 10 5, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices.

Original languageEnglish
Article number043121
JournalApplied Physics Letters
Volume101
Issue number4
DOIs
Publication statusPublished - 23 Jul 2012

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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