Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

Brahim Aissa, M. Nedil, A. H. Esam, Nouar Tabet, D. Therriault, F. Rosei

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 10 5, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices.

Original languageEnglish
Article number043121
JournalApplied Physics Letters
Volume101
Issue number4
DOIs
Publication statusPublished - 23 Jul 2012
Externally publishedYes

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logic circuits
transistors
carbon nanotubes
thin films
logic
field effect transistors
atmospheres
air

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications. / Aissa, Brahim; Nedil, M.; Esam, A. H.; Tabet, Nouar; Therriault, D.; Rosei, F.

In: Applied Physics Letters, Vol. 101, No. 4, 043121, 23.07.2012.

Research output: Contribution to journalArticle

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