Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells: Influence of ink precursors and preparation process

Xianzhong Lin, Jaison Kavalakkatt, Martha Ch Lux-Steiner, Ahmed Ennaoui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quaternary semiconductors, Cu2ZnSnS4 and Cu 2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20%. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages107-114
Number of pages8
Volume1538
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA
Duration: 1 Apr 20135 Apr 2013

Other

Other2013 MRS Spring Meeting
CitySan Francisco, CA
Period1/4/135/4/13

Fingerprint

inks
Ink
Solar cells
solar cells
Annealing
absorbers
preparation
air
Spin coating
Buffer layers
thin films
Air
Organic solvents
Raman spectroscopy
Earth (planet)
Semiconductor materials
Nanoparticles
X ray diffraction
Thin films
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Lin, X., Kavalakkatt, J., Lux-Steiner, M. C., & Ennaoui, A. (2013). Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells: Influence of ink precursors and preparation process. In Materials Research Society Symposium Proceedings (Vol. 1538, pp. 107-114) https://doi.org/10.1557/opl.2013.1024

Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells : Influence of ink precursors and preparation process. / Lin, Xianzhong; Kavalakkatt, Jaison; Lux-Steiner, Martha Ch; Ennaoui, Ahmed.

Materials Research Society Symposium Proceedings. Vol. 1538 2013. p. 107-114.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, X, Kavalakkatt, J, Lux-Steiner, MC & Ennaoui, A 2013, Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells: Influence of ink precursors and preparation process. in Materials Research Society Symposium Proceedings. vol. 1538, pp. 107-114, 2013 MRS Spring Meeting, San Francisco, CA, 1/4/13. https://doi.org/10.1557/opl.2013.1024
Lin X, Kavalakkatt J, Lux-Steiner MC, Ennaoui A. Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells: Influence of ink precursors and preparation process. In Materials Research Society Symposium Proceedings. Vol. 1538. 2013. p. 107-114 https://doi.org/10.1557/opl.2013.1024
Lin, Xianzhong ; Kavalakkatt, Jaison ; Lux-Steiner, Martha Ch ; Ennaoui, Ahmed. / Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells : Influence of ink precursors and preparation process. Materials Research Society Symposium Proceedings. Vol. 1538 2013. pp. 107-114
@inproceedings{ff7e1099adfd469e8e4ee3e2d3708f43,
title = "Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells: Influence of ink precursors and preparation process",
abstract = "Quaternary semiconductors, Cu2ZnSnS4 and Cu 2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20{\%}. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.",
author = "Xianzhong Lin and Jaison Kavalakkatt and Lux-Steiner, {Martha Ch} and Ahmed Ennaoui",
year = "2013",
doi = "10.1557/opl.2013.1024",
language = "English",
isbn = "9781605115153",
volume = "1538",
pages = "107--114",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Air-stable solution processed Cu2ZnSn(Sx,Se (1-x))4 thin film solar cells

T2 - Influence of ink precursors and preparation process

AU - Lin, Xianzhong

AU - Kavalakkatt, Jaison

AU - Lux-Steiner, Martha Ch

AU - Ennaoui, Ahmed

PY - 2013

Y1 - 2013

N2 - Quaternary semiconductors, Cu2ZnSnS4 and Cu 2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20%. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.

AB - Quaternary semiconductors, Cu2ZnSnS4 and Cu 2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20%. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.

UR - http://www.scopus.com/inward/record.url?scp=84889664868&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889664868&partnerID=8YFLogxK

U2 - 10.1557/opl.2013.1024

DO - 10.1557/opl.2013.1024

M3 - Conference contribution

AN - SCOPUS:84889664868

SN - 9781605115153

VL - 1538

SP - 107

EP - 114

BT - Materials Research Society Symposium Proceedings

ER -