Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide

W. J. Weber, W. Jiang, S. Thevuthasan

    Research output: Contribution to journalConference article

    52 Citations (Scopus)

    Abstract

    Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H+ to Au2+) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3 ± 0.15 eV (Stage I), 1.3 ± 0.25 eV (Stage II) and 1.5 ± 0.3 eV (Stage III).

    Original languageEnglish
    Pages (from-to)26-30
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume175-177
    DOIs
    Publication statusPublished - 1 Apr 2001
    Event12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil
    Duration: 3 Sep 20008 Sep 2000

      Fingerprint

    Keywords

    • Amorphization
    • Irradiation effects
    • Silicon carbide
    • Thermal recovery

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

    Cite this