Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide

W. J. Weber, W. Jiang, S. Thevuthasan

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H+ to Au2+) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3 ± 0.15 eV (Stage I), 1.3 ± 0.25 eV (Stage II) and 1.5 ± 0.3 eV (Stage III).

Original languageEnglish
Pages (from-to)26-30
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume175-177
DOIs
Publication statusPublished - Apr 2001
Externally publishedYes

Fingerprint

Silicon carbide
silicon carbides
Ion beams
recovery
ion beams
disorders
Annealing
Ions
Recovery
annealing
Activation energy
activation energy
sublattices
ions
Irradiation
Single crystals
Temperature
irradiation
Hot Temperature
silicon carbide

Keywords

  • Amorphization
  • Irradiation effects
  • Silicon carbide
  • Thermal recovery

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H+ to Au2+) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3 ± 0.15 eV (Stage I), 1.3 ± 0.25 eV (Stage II) and 1.5 ± 0.3 eV (Stage III).",
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author = "Weber, {W. J.} and W. Jiang and S. Thevuthasan",
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T1 - Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide

AU - Weber, W. J.

AU - Jiang, W.

AU - Thevuthasan, S.

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Y1 - 2001/4

N2 - Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H+ to Au2+) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3 ± 0.15 eV (Stage I), 1.3 ± 0.25 eV (Stage II) and 1.5 ± 0.3 eV (Stage III).

AB - Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H+ to Au2+) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3 ± 0.15 eV (Stage I), 1.3 ± 0.25 eV (Stage II) and 1.5 ± 0.3 eV (Stage III).

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KW - Irradiation effects

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KW - Thermal recovery

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