Accumulation and recovery of irradiation effects in silicon carbide

W. J. Weber, W. Jiang, S. Thevuthasan

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Citations (Scopus)

Abstract

Single crystals of 6H-SiC have been irradiated with a variety of ions over a wide range of fluences and temperatures. The temperature and dose dependence of damage accumulation has been investigated using in-situ Rutherford Backscattering Spectrometry in channeling geometry. At low temperatures, the accumulation of structural disorder exhibits a sigmoidal dependence on dose. At room temperature and higher, simultaneous recovery processes during irradiation significantly reduce the damage accumulation rates by up to a factor of five. Isochronal and isothermal annealing studies have been used to study the damage recovery behavior. For low defect concentrations introduced by 550 keV Si + irradiation at 160 K, complete recovery is observed at 300 K. However, defects introduced by He + irradiation on the Si sublattice are more difficult to anneal at room temperature, which suggests trapping of the implanted helium may inhibit defect recombination. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.3 ± 0.1 eV. Defect recovery above 570 K has an activation energy on the order of 1.5 ± 0.3 eV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages159-164
Number of pages6
Volume540
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998

Other

OtherProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
CityBoston, MA, USA
Period30/11/983/12/98

Fingerprint

Silicon carbide
Irradiation
Recovery
Defects
Temperature
Activation energy
Isothermal annealing
Helium
Rutherford backscattering spectroscopy
Spectrometry
silicon carbide
Single crystals
Ions
Geometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Weber, W. J., Jiang, W., & Thevuthasan, S. (1999). Accumulation and recovery of irradiation effects in silicon carbide. In Materials Research Society Symposium - Proceedings (Vol. 540, pp. 159-164). Materials Research Society.

Accumulation and recovery of irradiation effects in silicon carbide. / Weber, W. J.; Jiang, W.; Thevuthasan, S.

Materials Research Society Symposium - Proceedings. Vol. 540 Materials Research Society, 1999. p. 159-164.

Research output: Chapter in Book/Report/Conference proceedingChapter

Weber, WJ, Jiang, W & Thevuthasan, S 1999, Accumulation and recovery of irradiation effects in silicon carbide. in Materials Research Society Symposium - Proceedings. vol. 540, Materials Research Society, pp. 159-164, Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998', Boston, MA, USA, 30/11/98.
Weber WJ, Jiang W, Thevuthasan S. Accumulation and recovery of irradiation effects in silicon carbide. In Materials Research Society Symposium - Proceedings. Vol. 540. Materials Research Society. 1999. p. 159-164
Weber, W. J. ; Jiang, W. ; Thevuthasan, S. / Accumulation and recovery of irradiation effects in silicon carbide. Materials Research Society Symposium - Proceedings. Vol. 540 Materials Research Society, 1999. pp. 159-164
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