Accumulation and recovery of irradiation damage in He+ implanted α-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, D. E. McCready

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In situ RBS/Channeling (RBS/C) has been used to investigate damage accumulation and subsequent annealing behavior in single-crystal wafers of 6H-silicon carbide (α-SiC) irradiated at temperatures from 160 to 300 K with 390 keV He+ ions to fluences ranging from 7.5 × 1018 to 1.0 × 1020 He+/m2. Damage recovery in the irradiated crystals was studied by isochronal annealing at temperatures up to 1170 K. The RBS/C results show that complete amorphization in α-SiC does not occur at 190 K for irradiation fluences up to 1.0 × 1020 He+/m2 (0.38 dpa at the damage peak). For a fluence of 4.5 × 1019 He+/m2, the relative amount of damage accumulated during irradiation at 190 K is a factor of 5 larger than that accumulated under irradiation at 300 K, which suggests a higher rate of simultaneous point defect recombination at 300 K. In post-irradiation isochronal annealing studies, the integrated damage profile for all irradiated samples decreased exponentially with increasing annealing temperature. At low relative ion fluences and comparable irradiation-induced defect concentrations, the defects produced by He+ irradiation at 160 K are more difficult to anneal at 300 K than those produced by Si+ irradiation at 160 K, which suggests that trapping of He atoms at defects may be inhibiting recombination.

Original languageEnglish
Pages (from-to)295-302
Number of pages8
JournalJournal of Nuclear Materials
Volume257
Issue number3
Publication statusPublished - Dec 1998
Externally publishedYes

Fingerprint

recovery
Irradiation
damage
Recovery
irradiation
fluence
Annealing
annealing
Defects
defects
Ions
Amorphization
Point defects
Silicon carbide
silicon carbides
Temperature
point defects
temperature
ions
trapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jiang, W., Weber, W. J., Thevuthasan, S., & McCready, D. E. (1998). Accumulation and recovery of irradiation damage in He+ implanted α-SiC. Journal of Nuclear Materials, 257(3), 295-302.

Accumulation and recovery of irradiation damage in He+ implanted α-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E.

In: Journal of Nuclear Materials, Vol. 257, No. 3, 12.1998, p. 295-302.

Research output: Contribution to journalArticle

Jiang, W, Weber, WJ, Thevuthasan, S & McCready, DE 1998, 'Accumulation and recovery of irradiation damage in He+ implanted α-SiC', Journal of Nuclear Materials, vol. 257, no. 3, pp. 295-302.
Jiang W, Weber WJ, Thevuthasan S, McCready DE. Accumulation and recovery of irradiation damage in He+ implanted α-SiC. Journal of Nuclear Materials. 1998 Dec;257(3):295-302.
Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; McCready, D. E. / Accumulation and recovery of irradiation damage in He+ implanted α-SiC. In: Journal of Nuclear Materials. 1998 ; Vol. 257, No. 3. pp. 295-302.
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