Accumulation and recovery of disorder on silicon and carbon sublattices in ion-irradiated 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, V. Shutthanandan

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Abstract

Irradiation experiments have been performed at 100, 170 and 300 K for 6H-SiC single crystals using Au2+ and He+ ions over a range of fluences. The evolution of disorder on both the Si and C sublattices has been simultaneously investigated using 0.94 MeV D+ Rutherford backscattering spectrometry (RBS) in combination with 12C(d,p) nuclear reaction analysis (NRA) in a 〈0 0 0 1〉 axial channeling geometry. At low doses, a higher rate of C disordering is observed, which is consistent with molecular dynamics simulations that suggest a smaller threshold displacement energy on the C sublattice. At higher doses for He+ irradiation, the C disordering appears to increase less rapidly than the Si disordering. Three distinct recovery stages are observed on both the Si and C sublattices in the Au2+-irradiated 6H-SiC. However, complete recovery of irradiation-induced disorder does not occur during isochronal annealing at temperatures up to 970 K.

Original languageEnglish
Pages (from-to)96-101
Number of pages6
JournalJournal of Nuclear Materials
Volume289
Issue number1-2
DOIs
Publication statusPublished - Feb 2001
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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