Accumulation and recovery of disorder on silicon and carbon sublattices in ion-irradiated 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, V. Shutthanandan

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Irradiation experiments have been performed at 100, 170 and 300 K for 6H-SiC single crystals using Au2+ and He+ ions over a range of fluences. The evolution of disorder on both the Si and C sublattices has been simultaneously investigated using 0.94 MeV D+ Rutherford backscattering spectrometry (RBS) in combination with 12C(d,p) nuclear reaction analysis (NRA) in a 〈0 0 0 1〉 axial channeling geometry. At low doses, a higher rate of C disordering is observed, which is consistent with molecular dynamics simulations that suggest a smaller threshold displacement energy on the C sublattice. At higher doses for He+ irradiation, the C disordering appears to increase less rapidly than the Si disordering. Three distinct recovery stages are observed on both the Si and C sublattices in the Au2+-irradiated 6H-SiC. However, complete recovery of irradiation-induced disorder does not occur during isochronal annealing at temperatures up to 970 K.

Original languageEnglish
Pages (from-to)96-101
Number of pages6
JournalJournal of Nuclear Materials
Volume289
Issue number1-2
DOIs
Publication statusPublished - Feb 2001
Externally publishedYes

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Silicon
sublattices
Carbon
recovery
Irradiation
disorders
Ions
Recovery
irradiation
carbon
silicon
dosage
ions
Nuclear reactions
Rutherford backscattering spectroscopy
nuclear reactions
Spectrometry
Dosimetry
Molecular dynamics
backscattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Accumulation and recovery of disorder on silicon and carbon sublattices in ion-irradiated 6H-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Shutthanandan, V.

In: Journal of Nuclear Materials, Vol. 289, No. 1-2, 02.2001, p. 96-101.

Research output: Contribution to journalArticle

Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; Shutthanandan, V. / Accumulation and recovery of disorder on silicon and carbon sublattices in ion-irradiated 6H-SiC. In: Journal of Nuclear Materials. 2001 ; Vol. 289, No. 1-2. pp. 96-101.
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