Absorbing photonic crystals for thin film photovoltaics

O. El Daif, E. Drouard, G. Gomard, X. Meng, A. Kaminski, A. Fave, M. Lemiti, E. Garcia Caurel, P. Roca I Cabarrocas, S. Ahn, H. Jeon, C. Seassal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an absorbing planar photonic crystal. We theoretically demonstrate this absorption enhancement through one or two dimensional patterning, and show the experimental feasibility through large area holographic patterning. Numerical simulations show over 50% absorption enhancement over the part of the solar spectrum comprised between 380 and 750nm. It is experimentally confirmed by optical measurements performed on planar photonic crystals fabricated by laser holography and reactive ion etching.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7713
DOIs
Publication statusPublished - 2010
Externally publishedYes
EventPhotonic Crystal Materials and Devices IX - Brussels, Belgium
Duration: 12 Apr 201015 Apr 2010

Other

OtherPhotonic Crystal Materials and Devices IX
CountryBelgium
CityBrussels
Period12/4/1015/4/10

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Keywords

  • Photonic crystals
  • Photovoltaics
  • Thin film devices and applications

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

El Daif, O., Drouard, E., Gomard, G., Meng, X., Kaminski, A., Fave, A., Lemiti, M., Garcia Caurel, E., Roca I Cabarrocas, P., Ahn, S., Jeon, H., & Seassal, C. (2010). Absorbing photonic crystals for thin film photovoltaics. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7713). [771308] https://doi.org/10.1117/12.854035