A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C

Bo Wang, Man Kay Law, Fang Tang, Amine Bermak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively.

Original languageEnglish
Title of host publicationISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
Pages3114-3117
Number of pages4
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of
Duration: 20 May 201223 May 2012

Other

Other2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
CountryKorea, Republic of
CitySeoul
Period20/5/1223/5/12

Fingerprint

Temperature sensors
Smart sensors
Bias currents
Sensors
Electric potential
Temperature
Calibration
Sampling

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Wang, B., Law, M. K., Tang, F., & Bermak, A. (2012). A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. In ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems (pp. 3114-3117). [6271980] https://doi.org/10.1109/ISCAS.2012.6271980

A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. / Wang, Bo; Law, Man Kay; Tang, Fang; Bermak, Amine.

ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems. 2012. p. 3114-3117 6271980.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, B, Law, MK, Tang, F & Bermak, A 2012, A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. in ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems., 6271980, pp. 3114-3117, 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea, Republic of, 20/5/12. https://doi.org/10.1109/ISCAS.2012.6271980
Wang B, Law MK, Tang F, Bermak A. A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. In ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems. 2012. p. 3114-3117. 6271980 https://doi.org/10.1109/ISCAS.2012.6271980
Wang, Bo ; Law, Man Kay ; Tang, Fang ; Bermak, Amine. / A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems. 2012. pp. 3114-3117
@inproceedings{7afdc27ed93441b299d6399f27da0984,
title = "A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C",
abstract = "In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively.",
author = "Bo Wang and Law, {Man Kay} and Fang Tang and Amine Bermak",
year = "2012",
doi = "10.1109/ISCAS.2012.6271980",
language = "English",
pages = "3114--3117",
booktitle = "ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems",

}

TY - GEN

T1 - A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C

AU - Wang, Bo

AU - Law, Man Kay

AU - Tang, Fang

AU - Bermak, Amine

PY - 2012

Y1 - 2012

N2 - In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively.

AB - In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84866630746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866630746&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2012.6271980

DO - 10.1109/ISCAS.2012.6271980

M3 - Conference contribution

SP - 3114

EP - 3117

BT - ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems

ER -