A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C

Bo Wang, Man Kay Law, Fang Tang, Amine Bermak

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively.

Original languageEnglish
Pages3114-3117
Number of pages4
DOIs
Publication statusPublished - 28 Sep 2012
Event2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of
Duration: 20 May 201223 May 2012

Other

Other2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
CountryKorea, Republic of
CitySeoul
Period20/5/1223/5/12

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Wang, B., Law, M. K., Tang, F., & Bermak, A. (2012). A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. 3114-3117. Paper presented at 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea, Republic of. https://doi.org/10.1109/ISCAS.2012.6271980